Chemical vapor deposition of W-Si-N and W-B-N
Abstract
A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.
- Inventors:
- Issue Date:
- Sponsoring Org.:
- USDOE; USDOE, Washington, DC (United States)
- OSTI Identifier:
- 6386243
- Patent Number(s):
- 5916634
- Application Number:
- PPN: US 8-724341
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 1 Oct 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; BORON NITRIDES; CHEMICAL VAPOR DEPOSITION; PRECURSOR; SILICON NITRIDES; TUNGSTEN NITRIDES; USES; BORON COMPOUNDS; CHEMICAL COATING; DEPOSITION; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication
Citation Formats
Fleming, J G, Roherty-Osmun, E L, Smith, P M, Custer, J S, Jones, R V, Nicolet, M, Madar, R, and Bernard, C. Chemical vapor deposition of W-Si-N and W-B-N. United States: N. p., 1999.
Web.
Fleming, J G, Roherty-Osmun, E L, Smith, P M, Custer, J S, Jones, R V, Nicolet, M, Madar, R, & Bernard, C. Chemical vapor deposition of W-Si-N and W-B-N. United States.
Fleming, J G, Roherty-Osmun, E L, Smith, P M, Custer, J S, Jones, R V, Nicolet, M, Madar, R, and Bernard, C. Tue .
"Chemical vapor deposition of W-Si-N and W-B-N". United States.
@article{osti_6386243,
title = {Chemical vapor deposition of W-Si-N and W-B-N},
author = {Fleming, J G and Roherty-Osmun, E L and Smith, P M and Custer, J S and Jones, R V and Nicolet, M and Madar, R and Bernard, C},
abstractNote = {A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {6}
}
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