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Title: Chemical vapor deposition of W-Si-N and W-B-N

Abstract

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.

Inventors:
; ; ; ; ; ; ;
Issue Date:
Sponsoring Org.:
USDOE; USDOE, Washington, DC (United States)
OSTI Identifier:
6386243
Patent Number(s):
5916634
Application Number:
PPN: US 8-724341
Assignee:
Sandia Corp., Albuquerque, NM (United States)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 1 Oct 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON NITRIDES; CHEMICAL VAPOR DEPOSITION; PRECURSOR; SILICON NITRIDES; TUNGSTEN NITRIDES; USES; BORON COMPOUNDS; CHEMICAL COATING; DEPOSITION; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Fleming, J G, Roherty-Osmun, E L, Smith, P M, Custer, J S, Jones, R V, Nicolet, M, Madar, R, and Bernard, C. Chemical vapor deposition of W-Si-N and W-B-N. United States: N. p., 1999. Web.
Fleming, J G, Roherty-Osmun, E L, Smith, P M, Custer, J S, Jones, R V, Nicolet, M, Madar, R, & Bernard, C. Chemical vapor deposition of W-Si-N and W-B-N. United States.
Fleming, J G, Roherty-Osmun, E L, Smith, P M, Custer, J S, Jones, R V, Nicolet, M, Madar, R, and Bernard, C. Tue . "Chemical vapor deposition of W-Si-N and W-B-N". United States.
@article{osti_6386243,
title = {Chemical vapor deposition of W-Si-N and W-B-N},
author = {Fleming, J G and Roherty-Osmun, E L and Smith, P M and Custer, J S and Jones, R V and Nicolet, M and Madar, R and Bernard, C},
abstractNote = {A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {6}
}