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Title: Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films

Abstract

A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

Inventors:
Issue Date:
Sponsoring Org.:
USDOE; USDOE, Washington, DC (United States)
OSTI Identifier:
6373004
Patent Number(s):
5909632
Application Number:
PPN: US 8-937720
Assignee:
Midwest Research Inst., Kansas City, MO (United States)
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Resource Relation:
Patent File Date: 25 Sep 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; CADMIUM TELLURIDES; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; P-TYPE CONDUCTORS; THIN FILMS; ZINC TELLURIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; FILMS; MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS; ZINC COMPOUNDS; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Gessert, T A. Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films. United States: N. p., 1999. Web.
Gessert, T A. Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films. United States.
Gessert, T A. Tue . "Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films". United States.
@article{osti_6373004,
title = {Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films},
author = {Gessert, T A},
abstractNote = {A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {6}
}