Deposition of dopant impurities and pulsed energy drive-in
Abstract
A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique is disclosed. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques. 2 figs.
- Inventors:
- Issue Date:
- Sponsoring Org.:
- USDOE; USDOE, Washington, DC (United States)
- OSTI Identifier:
- 6332900
- Patent Number(s):
- 5918140
- Application Number:
- PPN: US 8-876414
- Assignee:
- Univ. of California, Oakland, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 16 Jun 1997
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL DOPING; ION BEAMS; LASER RADIATION; MELTING; SEMICONDUCTOR MATERIALS; BEAMS; CHEMICAL COATING; DEPOSITION; ELECTROMAGNETIC RADIATION; MATERIALS; PHASE TRANSFORMATIONS; RADIATIONS; SURFACE COATING; 360601* - Other Materials- Preparation & Manufacture
Citation Formats
Wickboldt, P, Carey, P G, Smith, P M, and Ellingboe, A R. Deposition of dopant impurities and pulsed energy drive-in. United States: N. p., 1999.
Web.
Wickboldt, P, Carey, P G, Smith, P M, & Ellingboe, A R. Deposition of dopant impurities and pulsed energy drive-in. United States.
Wickboldt, P, Carey, P G, Smith, P M, and Ellingboe, A R. Tue .
"Deposition of dopant impurities and pulsed energy drive-in". United States.
@article{osti_6332900,
title = {Deposition of dopant impurities and pulsed energy drive-in},
author = {Wickboldt, P and Carey, P G and Smith, P M and Ellingboe, A R},
abstractNote = {A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique is disclosed. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {6}
}
Search for the full text at the U.S. Patent and Trademark Office
Note: You will be redirected to the USPTO site, which may require a pop-up blocker to be deactivated to view the patent. If so, you will need to manually turn off your browser's pop-up blocker, typically found within the browser settings. (See DOE Patents FAQs for more information.)
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.