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Title: Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

Abstract

An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

Inventors:
; ;
Issue Date:
Research Org.:
AT and T Technologies, Inc., Greensboro, NC (USA)
OSTI Identifier:
6292557
Patent Number(s):
7207487
Application Number:
ON: DE89010799
Assignee:
Dept. of Energy
Patent Classifications (CPCs):
G - PHYSICS G06 - COMPUTING G06Q - DATA PROCESSING SYSTEMS OR METHODS, SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL, SUPERVISORY OR FORECASTING PURPOSES
G - PHYSICS G07 - CHECKING-DEVICES G07C - TIME OR ATTENDANCE REGISTERS
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR DEVICES; ETCHING; ANNEALING; DESIGN; FABRICATION; INVENTIONS; ION IMPLANTATION; PROCESS CONTROL; CONTROL; HEAT TREATMENTS; SURFACE FINISHING; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Ashby, C. I.H., Myers, D. R., and Vook, F. L.. Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication. United States: N. p., 1988. Web.
Ashby, C. I.H., Myers, D. R., & Vook, F. L.. Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication. United States.
Ashby, C. I.H., Myers, D. R., and Vook, F. L.. Thu . "Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication". United States. https://www.osti.gov/servlets/purl/6292557.
@article{osti_6292557,
title = {Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication},
author = {Ashby, C. I.H. and Myers, D. R. and Vook, F. L.},
abstractNote = {An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {6}
}