Integrated circuit with dissipative layer for photogenerated carriers
Abstract
The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissipative layer of silicon nitride between a silicon substrate and the active device. Free carriers generated in the substrate are dissipated by the layer before they can build up charge on the active device. 1 fig.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- OSTI Identifier:
- 6157863
- Patent Number(s):
- 7183807
- Application Number:
- ON: DE89010084
- Assignee:
- Dept. of Energy
- Patent Classifications (CPCs):
-
H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03K - PULSE TECHNIQUE
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Resource Relation:
- Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; INTEGRATED CIRCUITS; DESIGN; CHARGE CARRIERS; ELECTRONIC CIRCUITS; INVENTIONS; LOGIC CIRCUITS; PHOTOCURRENTS; SILICON NITRIDES; SUBSTRATES; CURRENTS; ELECTRIC CURRENTS; MICROELECTRONIC CIRCUITS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SILICON COMPOUNDS; 420800* - Engineering- Electronic Circuits & Devices- (-1989)
Citation Formats
Myers, D. R. Integrated circuit with dissipative layer for photogenerated carriers. United States: N. p., 1988.
Web.
Myers, D. R. Integrated circuit with dissipative layer for photogenerated carriers. United States.
Myers, D. R. Wed .
"Integrated circuit with dissipative layer for photogenerated carriers". United States. https://www.osti.gov/servlets/purl/6157863.
@article{osti_6157863,
title = {Integrated circuit with dissipative layer for photogenerated carriers},
author = {Myers, D. R.},
abstractNote = {The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissipative layer of silicon nitride between a silicon substrate and the active device. Free carriers generated in the substrate are dissipated by the layer before they can build up charge on the active device. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Apr 20 00:00:00 EDT 1988},
month = {Wed Apr 20 00:00:00 EDT 1988}
}
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