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Title: Semiconductor with protective surface coating and method of manufacture thereof. [Patent application]

Abstract

Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

Inventors:
;
Issue Date:
OSTI Identifier:
6155548
Assignee:
Dept. of Energy TIC; ERA-06-031113; EDB-81-100228
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; GERMANIUM DIODES; SURFACE COATING; SEMICONDUCTOR DEVICES; FABRICATION; RADIATION DETECTORS; DEPOSITION; MEASURING INSTRUMENTS; SEMICONDUCTOR DIODES; 420800* - Engineering- Electronic Circuits & Devices- (-1989); 440100 - Radiation Instrumentation

Citation Formats

Hansen, W.L., and Haller, E.E. Semiconductor with protective surface coating and method of manufacture thereof. [Patent application]. United States: N. p., 1980. Web.
Hansen, W.L., & Haller, E.E. Semiconductor with protective surface coating and method of manufacture thereof. [Patent application]. United States.
Hansen, W.L., and Haller, E.E. Fri . "Semiconductor with protective surface coating and method of manufacture thereof. [Patent application]". United States.
@article{osti_6155548,
title = {Semiconductor with protective surface coating and method of manufacture thereof. [Patent application]},
author = {Hansen, W.L. and Haller, E.E.},
abstractNote = {Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {9}
}