High power linear pulsed beam annealer. [Patent application]

Strathman, M D; Sadana, D K; True, R B

Title: High power linear pulsed beam annealer. [Patent application]

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Abstract

A high power pulsed electron beam system for annealing semiconductors is comprised of an electron gun having a heated cathode, control grid and focus ring for confining the pulsed beam of electrons to a predetermined area, and a curved drift tube. The drift tube and an annular Faraday shield between the focus ring and the drift tube are maintained at a high positive voltage with respect to the cathode to accelerate electrons passing through the focus ring, thereby eliminating space charge limitations on the emission of electrons from said gun. A coil surrounding the curved drift tube provides a magnetic field which maintains the electron beam focused about the axis of the tube. The magnetic field produced by the coil around the curved tube imparts motion to electrons in a spiral path for shallow penetration of the electrons into a target. It also produces a scalloped profile of the electron beam. A second drift tube spaced a predetermined distance from the curved tube is positioned with its axis aligned with the axis of the first drift tube. The second drift tube and the target holder are maintained at a reference voltage between the cathode voltage and the curved tube voltagemore » « less

Inventors:: Strathman, M D; Sadana, D K; True, R B

Issue Date:: 1980-11-26

OSTI Identifier:: 6039366

Assignee:: Dept. of Energy

DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 43 PARTICLE ACCELERATORS; 42 ENGINEERING; ELECTRON SOURCES; DESIGN; SEMICONDUCTOR MATERIALS; ANNEALING; CRYSTAL DEFECTS; DRIFT TUBES; ELECTRIC POTENTIAL; ELECTRON BEAMS; PULSED IRRADIATION; SAMPLE HOLDERS; TARGETS; BEAMS; CRYSTAL STRUCTURE; HEAT TREATMENTS; IRRADIATION; LEPTON BEAMS; MATERIALS; PARTICLE BEAMS; PARTICLE SOURCES; RADIATION SOURCES; 430100* - Particle Accelerators- Design, Development, & Operation; 420800 - Engineering- Electronic Circuits & Devices- (-1989)

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                    Strathman, M D, Sadana, D K, and True, R B. High power linear pulsed beam annealer. [Patent application].  United States: N. p., 1980. 
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                    Strathman, M D, Sadana, D K, & True, R B. High power linear pulsed beam annealer. [Patent application].  United States.

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                    Strathman, M D, Sadana, D K, and True, R B. Wed .  
        "High power linear pulsed beam annealer. [Patent application]".  United States.

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@article{osti_6039366,

  title        = {High power linear pulsed beam annealer. [Patent application]},

  author       = {Strathman, M D and Sadana, D K and True, R B},

  abstractNote = {A high power pulsed electron beam system for annealing semiconductors is comprised of an electron gun having a heated cathode, control grid and focus ring for confining the pulsed beam of electrons to a predetermined area, and a curved drift tube. The drift tube and an annular Faraday shield between the focus ring and the drift tube are maintained at a high positive voltage with respect to the cathode to accelerate electrons passing through the focus ring, thereby eliminating space charge limitations on the emission of electrons from said gun. A coil surrounding the curved drift tube provides a magnetic field which maintains the electron beam focused about the axis of the tube. The magnetic field produced by the coil around the curved tube imparts motion to electrons in a spiral path for shallow penetration of the electrons into a target. It also produces a scalloped profile of the electron beam. A second drift tube spaced a predetermined distance from the curved tube is positioned with its axis aligned with the axis of the first drift tube. The second drift tube and the target holder are maintained at a reference voltage between the cathode voltage and the curved tube voltage to decelerate the electrons. A second coil surrounding the second drift tube, maintains the electron beam focused about the axis of the second drift tube. The magnetic field of the second coil comprises the electron beam to the area of the semiconductor on the target holder.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1980},

  month        = {11}

}

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