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Title: Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

Abstract

In a field-effect transistor comprising a semiconductor having therein a source, a drain, a channel and a gate in operational relationship, there is provided an improvement wherein said semiconductor is a superlattice comprising alternating quantum well and barrier layers, the quantum well layers comprising a first direct gap semiconductor material which in bulk form has a certain bandgap and a curve of electron velocity versus applied electric field which has a maximum electron velocity at a certain electric field, the barrier layers comprising a second semiconductor material having a bandgap wider than that of said first semiconductor material, wherein the layer thicknesses of said quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice having a curve of electron velocity versus applied electric field which has a maximum electron velocity at a certain electric field, and wherein the thicknesses of said quantum well layers are selected to provide a superlattice curve of electron velocity versus applied electric field whereby, at applied electric fields higher than that at which the maximum electron velocity occurs in said first material when in bulk form, the electron velocities are higher in said superlattice than they are in said firstmore » semiconductor material in bulk form.« less

Inventors:
; ; ; ;
Issue Date:
OSTI Identifier:
6013510
Application Number:
ON: TI85006435
Assignee:
Dept. of Energy SNL; EDB-85-039211
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; FIELD EFFECT TRANSISTORS; DESIGN; SUPERLATTICES; SEMICONDUCTOR DEVICES; TRANSISTORS; 420800* - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Chaffin, R.J., Dawson, L.R., Fritz, I.J., Osbourn, G.C., and Zipperian, T.E. Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields. United States: N. p., 1984. Web.
Chaffin, R.J., Dawson, L.R., Fritz, I.J., Osbourn, G.C., & Zipperian, T.E. Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields. United States.
Chaffin, R.J., Dawson, L.R., Fritz, I.J., Osbourn, G.C., and Zipperian, T.E. Thu . "Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields". United States.
@article{osti_6013510,
title = {Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields},
author = {Chaffin, R.J. and Dawson, L.R. and Fritz, I.J. and Osbourn, G.C. and Zipperian, T.E.},
abstractNote = {In a field-effect transistor comprising a semiconductor having therein a source, a drain, a channel and a gate in operational relationship, there is provided an improvement wherein said semiconductor is a superlattice comprising alternating quantum well and barrier layers, the quantum well layers comprising a first direct gap semiconductor material which in bulk form has a certain bandgap and a curve of electron velocity versus applied electric field which has a maximum electron velocity at a certain electric field, the barrier layers comprising a second semiconductor material having a bandgap wider than that of said first semiconductor material, wherein the layer thicknesses of said quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice having a curve of electron velocity versus applied electric field which has a maximum electron velocity at a certain electric field, and wherein the thicknesses of said quantum well layers are selected to provide a superlattice curve of electron velocity versus applied electric field whereby, at applied electric fields higher than that at which the maximum electron velocity occurs in said first material when in bulk form, the electron velocities are higher in said superlattice than they are in said first semiconductor material in bulk form.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {4}
}