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Title: Increase of bulk optical damage threshold fluences of KDP crystals by laser irradiation and heat treatment

Abstract

The bulk optical damage threshold fluence of potassium dihydrogen phosphate (KDP) crystals is increased by irradiating the crystals with laser pulses of duration 1 to 20 nanoseconds of increasing fluence, below the optical damage threshold fluence for untreated crystals, or by baking the crystals for times of the order of 24 hours at temperatures of 110 to 165/sup 0/C, or by a combination of laser irradiation and baking.

Inventors:
; ; ; ;
Issue Date:
OSTI Identifier:
6007997
Application Number:
ON: DE83013203
Assignee:
ERA-08-036812; EDB-83-113260
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; LASERS; OPTICAL SYSTEMS; DAMAGE; POTASSIUM PHOSPHATES; BAKING; CRYSTALS; LASER RADIATION; ALKALI METAL COMPOUNDS; ELECTROMAGNETIC RADIATION; HEATING; OXYGEN COMPOUNDS; PHOSPHATES; PHOSPHORUS COMPOUNDS; POTASSIUM COMPOUNDS; RADIATIONS; 420300* - Engineering- Lasers- (-1989)

Citation Formats

Swain, J.E., Stokowski, S.E., Milam, D., Kennedy, G.C., and Rainer, F. Increase of bulk optical damage threshold fluences of KDP crystals by laser irradiation and heat treatment. United States: N. p., 1982. Web.
Swain, J.E., Stokowski, S.E., Milam, D., Kennedy, G.C., & Rainer, F. Increase of bulk optical damage threshold fluences of KDP crystals by laser irradiation and heat treatment. United States.
Swain, J.E., Stokowski, S.E., Milam, D., Kennedy, G.C., and Rainer, F. Wed . "Increase of bulk optical damage threshold fluences of KDP crystals by laser irradiation and heat treatment". United States.
@article{osti_6007997,
title = {Increase of bulk optical damage threshold fluences of KDP crystals by laser irradiation and heat treatment},
author = {Swain, J.E. and Stokowski, S.E. and Milam, D. and Kennedy, G.C. and Rainer, F.},
abstractNote = {The bulk optical damage threshold fluence of potassium dihydrogen phosphate (KDP) crystals is increased by irradiating the crystals with laser pulses of duration 1 to 20 nanoseconds of increasing fluence, below the optical damage threshold fluence for untreated crystals, or by baking the crystals for times of the order of 24 hours at temperatures of 110 to 165/sup 0/C, or by a combination of laser irradiation and baking.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {7}
}