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Title: Electron beam enhanced surface modification for making highly resolved structures

Abstract

A method for forming high resolution submicron structures on a substrate is provided by direct writing with a submicron electron beam in a partial pressure of a selected gas phase characterized by the ability to dissociate under the beam into a stable gaseous leaving group and a reactant fragment that combines with the substrate material under beam energy to form at least a surface compound. Variations of the method provide semiconductor device regions on doped silicon substrates, interconnect lines between active sites, three dimensional electronic chip structures, electron beam and optical read mass storage devices that may include color differentiated data areas, and resist areas for use with selective etching techniques.

Inventors:
Issue Date:
OSTI Identifier:
5835739
Application Number:
ON: DE85011609
Assignee:
Dept. of Energy EDB-85-087395
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR DEVICES; SURFACE TREATMENTS; ELECTRON BEAM MACHINING; SILICON; ELEMENTS; MACHINING; SEMIMETALS; 420800* - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Pitts, J.R. Electron beam enhanced surface modification for making highly resolved structures. United States: N. p., 1984. Web.
Pitts, J.R. Electron beam enhanced surface modification for making highly resolved structures. United States.
Pitts, J.R. Wed . "Electron beam enhanced surface modification for making highly resolved structures". United States.
@article{osti_5835739,
title = {Electron beam enhanced surface modification for making highly resolved structures},
author = {Pitts, J.R.},
abstractNote = {A method for forming high resolution submicron structures on a substrate is provided by direct writing with a submicron electron beam in a partial pressure of a selected gas phase characterized by the ability to dissociate under the beam into a stable gaseous leaving group and a reactant fragment that combines with the substrate material under beam energy to form at least a surface compound. Variations of the method provide semiconductor device regions on doped silicon substrates, interconnect lines between active sites, three dimensional electronic chip structures, electron beam and optical read mass storage devices that may include color differentiated data areas, and resist areas for use with selective etching techniques.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {10}
}