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Title: Free-standing polycrystalline boron phosphide film and method for production thereof

Abstract

A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.

Inventors:
;
Issue Date:
OSTI Identifier:
5827636
Application Number:
ON: DE83018104
Assignee:
SNL; ERA-08-054285; EDB-83-177672
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON PHOSPHIDES; DEPOSITION; FILMS; POLYCRYSTALS; SUBSTRATES; BORON COMPOUNDS; CRYSTALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Baughman, R.J., and Ginley, D.S. Free-standing polycrystalline boron phosphide film and method for production thereof. United States: N. p., 1982. Web.
Baughman, R.J., & Ginley, D.S. Free-standing polycrystalline boron phosphide film and method for production thereof. United States.
Baughman, R.J., and Ginley, D.S. Thu . "Free-standing polycrystalline boron phosphide film and method for production thereof". United States.
@article{osti_5827636,
title = {Free-standing polycrystalline boron phosphide film and method for production thereof},
author = {Baughman, R.J. and Ginley, D.S.},
abstractNote = {A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {9}
}