Method and apparatus for melt growth of crystalline semiconductor sheets

Title: Method and apparatus for melt growth of crystalline semiconductor sheets

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Abstract

An economical method is presented for forming thin sheets of crystalline silicon suitable for use in a photovoltaic conversion cell by solidification from the liquid phase. Two spatially separated, generally coplanar filaments wettable by liquid silicon and joined together at the end by a bridge member are immersed in a silicon melt and then slowly withdrawn from the melt so that a silicon crystal is grown between the edge of the bridge and the filaments.

Inventors:: Ciszek, T.F.; Hurd, J.L.

Issue Date:: 1981-02-25

OSTI Identifier:: 5719531

Application Number:: ON: DE82004529

Assignee:: Dept. of Energy TIC; NTS-82-004399; ERA-07-029466; EDB-82-069918

DOE Contract Number:: AC02-77CH00178

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; SILICON; CRYSTAL GROWTH METHODS; CAPILLARY FLOW; FILMS; POLYCRYSTALS; CRYSTALS; ELEMENTS; FLUID FLOW; SEMIMETALS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

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                    Ciszek, T.F., and Hurd, J.L. Method and apparatus for melt growth of crystalline semiconductor sheets.  United States: N. p., 1981. 
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                    Ciszek, T.F., & Hurd, J.L. Method and apparatus for melt growth of crystalline semiconductor sheets.  United States.

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                    Ciszek, T.F., and Hurd, J.L. Wed .  
        "Method and apparatus for melt growth of crystalline semiconductor sheets".  United States.

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@article{osti_5719531,

  title        = {Method and apparatus for melt growth of crystalline semiconductor sheets},

  author       = {Ciszek, T.F. and Hurd, J.L.},

  abstractNote = {An economical method is presented for forming thin sheets of crystalline silicon suitable for use in a photovoltaic conversion cell by solidification from the liquid phase. Two spatially separated, generally coplanar filaments wettable by liquid silicon and joined together at the end by a bridge member are immersed in a silicon melt and then slowly withdrawn from the melt so that a silicon crystal is grown between the edge of the bridge and the filaments.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1981},

  month        = {2}

}

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