Preparation of a semiconductor thin film

Pehnt, M; Schulz, D L; Curtis, C J; Ginley, D S

Title: Preparation of a semiconductor thin film

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Abstract

A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Inventors:: Pehnt, M; Schulz, D L; Curtis, C J; Ginley, D S

Issue Date:: 1998-01-27

Research Org.:: Midwest Research Institute, Kansas City, MO (United States)

Sponsoring Org.:: USDOE, Washington, DC (United States)

OSTI Identifier:: 570435

Patent Number(s):: 5711803

Application Number:: PAN: 8-536,348

Assignee:: Midwest Research Inst., Kansas City, MO (United States)

DOE Contract Number:: AC36-83CH10093

Resource Type:: Patent

Resource Relation:: Other Information: PBD: 27 Jan 1998

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SEMICONDUCTOR MATERIALS; FABRICATION; SUBSTRATES; CRYSTAL GROWTH; THIN FILMS

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                    Pehnt, M, Schulz, D L, Curtis, C J, and Ginley, D S. Preparation of a semiconductor thin film.  United States: N. p., 1998. 
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                    Pehnt, M, Schulz, D L, Curtis, C J, & Ginley, D S. Preparation of a semiconductor thin film.  United States.

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                    Pehnt, M, Schulz, D L, Curtis, C J, and Ginley, D S. Tue .  
        "Preparation of a semiconductor thin film".  United States.

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@article{osti_570435,

  title        = {Preparation of a semiconductor thin film},

  author       = {Pehnt, M and Schulz, D L and Curtis, C J and Ginley, D S},

  abstractNote = {A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1998},

  month        = {1}

}

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