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Title: Preparation of a semiconductor thin film

Abstract

A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Inventors:
; ; ;
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
570435
Patent Number(s):
5711803
Application Number:
PAN: 8-536,348
Assignee:
Midwest Research Inst., Kansas City, MO (United States)
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 27 Jan 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SEMICONDUCTOR MATERIALS; FABRICATION; SUBSTRATES; CRYSTAL GROWTH; THIN FILMS

Citation Formats

Pehnt, M, Schulz, D L, Curtis, C J, and Ginley, D S. Preparation of a semiconductor thin film. United States: N. p., 1998. Web.
Pehnt, M, Schulz, D L, Curtis, C J, & Ginley, D S. Preparation of a semiconductor thin film. United States.
Pehnt, M, Schulz, D L, Curtis, C J, and Ginley, D S. Tue . "Preparation of a semiconductor thin film". United States.
@article{osti_570435,
title = {Preparation of a semiconductor thin film},
author = {Pehnt, M and Schulz, D L and Curtis, C J and Ginley, D S},
abstractNote = {A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}