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Title: Fabrication of polycrystalline thin films by pulsed laser processing

Abstract

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

Inventors:
; ; ;
Issue Date:
Research Org.:
Univ. of California (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
570429
Patent Number(s):
5714404
Application Number:
PAN: 8-154,347
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 3 Feb 1998
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SOLAR CELLS; THIN FILMS; FABRICATION; LASER RADIATION; POLYCRYSTALS; HEATING; CRYSTAL DOPING; SEMICONDUCTOR MATERIALS

Citation Formats

Mitlitsky, F, Truher, J B, Kaschmitter, J L, and Colella, N J. Fabrication of polycrystalline thin films by pulsed laser processing. United States: N. p., 1998. Web.
Mitlitsky, F, Truher, J B, Kaschmitter, J L, & Colella, N J. Fabrication of polycrystalline thin films by pulsed laser processing. United States.
Mitlitsky, F, Truher, J B, Kaschmitter, J L, and Colella, N J. Tue . "Fabrication of polycrystalline thin films by pulsed laser processing". United States.
@article{osti_570429,
title = {Fabrication of polycrystalline thin films by pulsed laser processing},
author = {Mitlitsky, F and Truher, J B and Kaschmitter, J L and Colella, N J},
abstractNote = {A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {2}
}

Works referenced in this record:

Laser-assisted deposition of thin films from gas-phase and surface-adsorbed molecules
journal, September 1989