skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Composition/bandgap selective dry photochemical etching of semiconductor materials

Abstract

Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (USA)
OSTI Identifier:
5660460
Application Number:
ON: DE86013758
Assignee:
Dept. of Energy
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; SEMICONDUCTOR DEVICES; FABRICATION; SEMICONDUCTOR MATERIALS; ETCHING; PHOTOCHEMICAL REACTIONS; CHEMICAL REACTIONS; MATERIALS; SURFACE FINISHING; 360601* - Other Materials- Preparation & Manufacture; 420800 - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Ashby, C I.H., and Dishman, J L. Composition/bandgap selective dry photochemical etching of semiconductor materials. United States: N. p., 1985. Web.
Ashby, C I.H., & Dishman, J L. Composition/bandgap selective dry photochemical etching of semiconductor materials. United States.
Ashby, C I.H., and Dishman, J L. Fri . "Composition/bandgap selective dry photochemical etching of semiconductor materials". United States.
@article{osti_5660460,
title = {Composition/bandgap selective dry photochemical etching of semiconductor materials},
author = {Ashby, C I.H. and Dishman, J L},
abstractNote = {Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {10}
}