Composition/bandgap selective dry photochemical etching of semiconductor materials

Title: Composition/bandgap selective dry photochemical etching of semiconductor materials

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Abstract

Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

Inventors:: Ashby, C I.H.; Dishman, J L

Issue Date:: 1985-10-11

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

OSTI Identifier:: 5660460

Application Number:: ON: DE86013758

Assignee:: Dept. of Energy

DOE Contract Number:: AC04-76DP00789

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 42 ENGINEERING; SEMICONDUCTOR DEVICES; FABRICATION; SEMICONDUCTOR MATERIALS; ETCHING; PHOTOCHEMICAL REACTIONS; CHEMICAL REACTIONS; MATERIALS; SURFACE FINISHING; 360601* - Other Materials- Preparation & Manufacture; 420800 - Engineering- Electronic Circuits & Devices- (-1989)

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                    Ashby, C I.H., and Dishman, J L. Composition/bandgap selective dry photochemical etching of semiconductor materials.  United States: N. p., 1985. 
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                    Ashby, C I.H., & Dishman, J L. Composition/bandgap selective dry photochemical etching of semiconductor materials.  United States.

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                    Ashby, C I.H., and Dishman, J L. Fri .  
        "Composition/bandgap selective dry photochemical etching of semiconductor materials".  United States.

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@article{osti_5660460,

  title        = {Composition/bandgap selective dry photochemical etching of semiconductor materials},

  author       = {Ashby, C I.H. and Dishman, J L},

  abstractNote = {Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1985},

  month        = {10}

}

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