Composition/bandgap selective dry photochemical etching of semiconductor materials

Title: Composition/bandgap selective dry photochemical etching of semiconductor materials

Full Record
Other Related Research

Abstract

Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

Inventors:: Ashby, C I.H.; Dishman, J L

Issue Date:: 1985-10-11

Research Org.:: Sandia National Labs., Albuquerque, NM (USA)

OSTI Identifier:: 5660460

Application Number:: ON: DE86013758

Assignee:: Dept. of Energy

DOE Contract Number:: AC04-76DP00789

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 42 ENGINEERING; SEMICONDUCTOR DEVICES; FABRICATION; SEMICONDUCTOR MATERIALS; ETCHING; PHOTOCHEMICAL REACTIONS; CHEMICAL REACTIONS; MATERIALS; SURFACE FINISHING; 360601* - Other Materials- Preparation & Manufacture; 420800 - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats


                    Ashby, C I.H., and Dishman, J L. Composition/bandgap selective dry photochemical etching of semiconductor materials.  United States: N. p., 1985. 
        Web.

Copy to clipboard


                    Ashby, C I.H., & Dishman, J L. Composition/bandgap selective dry photochemical etching of semiconductor materials.  United States.

Copy to clipboard


                    Ashby, C I.H., and Dishman, J L. Fri .  
        "Composition/bandgap selective dry photochemical etching of semiconductor materials".  United States.

Copy to clipboard


                    
@article{osti_5660460,

  title        = {Composition/bandgap selective dry photochemical etching of semiconductor materials},

  author       = {Ashby, C I.H. and Dishman, J L},

  abstractNote = {Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1985},

  month        = {10}

}

Copy to clipboard

Patent:

Search for the full text at the U.S. Patent and Trademark Office

Save / Share:

Export Metadata

Save to My Library

Similar records in DOE Patents and OSTI.GOV collections:

Composition/bandgap selective dry photochemical etching of semiconductor materials

Patent Ashby, C I.H.; Dishman, J L

A method is described of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap E/sub g1/ in the presence of a second semiconductor material of a different composition and direct bandgap E/sub g2/, wherein E/sub g2/>E/sub g1/. The second semiconductor material is not substantially etched during the method, comprising subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where the etchant would be ineffective for chemical etching of either material where the photons are not present, the photons being of an energy greater than E/sub g1/ butmore »« less
Composition/bandgap selective dry photochemical etching of semiconductor materials

Patent Ashby, Carol I. H. [Edgewood, NM]; Dishman, James L [Albuquerque, NM]

A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductormore »« less
Full Text Available
Dopant type and/or concentration selective dry photochemical etching of semiconductor materials

Patent Ashby, C R.H.; Dishman, J L

Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronicmore »« less
Dopant type and/or concentration selective dry photochemical etching of semiconductor materials

Patent Ashby, C I.H.; Dishman, J L

A method is described of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from the first material. The second material is not substantially etched during the method which comprises: subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where the etchant would be ineffective for chemical etching of either material where the photons not present, the conditions also being such that the resultant electronic structuremore »« less
Dopant type and/or concentration selective dry photochemical etching of semiconductor materials

Patent Ashby, Carol I. H. [Edgewood, NM]; Dishman, James L [Albuquerque, NM]

A method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method, comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the firstmore »« less
Full Text Available

Similar Records