Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same

Title: Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same

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Abstract

Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10/sup 12/ protons per cm/sup 3/ and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F/sup +/ luminescence is produced when the crystal is optically excited.

Inventors:: Chen, Yok; Gonzalez, R.

Issue Date:: 1985-07-03

Research Org.:: Oak Ridge National Lab., TN (USA)

OSTI Identifier:: 5657153

Application Number:: ON: DE86013697

Assignee:: Dept. of Energy TIC; ERA-11-005255; EDB-86-137404

DOE Contract Number:: AC05-84OR21400

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; LASERS; OXIDES; QUANTUM EFFICIENCY; CHALCOGENIDES; EFFICIENCY; OXYGEN COMPOUNDS; 420300* - Engineering- Lasers- (-1989)

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                    Chen, Yok, and Gonzalez, R. Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same.  United States: N. p., 1985. 
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                    Chen, Yok, & Gonzalez, R. Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same.  United States.

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                    Chen, Yok, and Gonzalez, R. Wed .  
        "Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same".  United States.

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@article{osti_5657153,

  title        = {Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same},

  author       = {Chen, Yok and Gonzalez, R.},

  abstractNote = {Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10/sup 12/ protons per cm/sup 3/ and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F/sup +/ luminescence is produced when the crystal is optically excited.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1985},

  month        = {7}

}

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Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same

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A high power laser host material is described which is formed of a refractory oxide crystal characterized by high quantum efficiency and high thermal stability with a substantially complete depletion of hydrogen and containing sufficient oxygen anion vacancies to produce only F/sup +/ luminescence when optically excited.
Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same

Patent Chen, Yok (Oak Ridge, TN); Gonzalez, Roberto (Madrid, ES)

Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10.sup.12 protons per cm.sup.3 and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F.sup.+ luminescence is produced when the crystal is optically excited.
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