Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same
Abstract
Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10/sup 12/ protons per cm/sup 3/ and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F/sup +/ luminescence is produced when the crystal is optically excited.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 5657153
- Application Number:
- ON: DE86013697
- Assignee:
- Dept. of Energy
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; LASERS; OXIDES; QUANTUM EFFICIENCY; CHALCOGENIDES; EFFICIENCY; OXYGEN COMPOUNDS; 420300* - Engineering- Lasers- (-1989)
Citation Formats
Chen, Yok, and Gonzalez, R. Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same. United States: N. p., 1985.
Web.
Chen, Yok, & Gonzalez, R. Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same. United States.
Chen, Yok, and Gonzalez, R. Wed .
"Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same". United States.
@article{osti_5657153,
title = {Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same},
author = {Chen, Yok and Gonzalez, R},
abstractNote = {Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10/sup 12/ protons per cm/sup 3/ and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F/sup +/ luminescence is produced when the crystal is optically excited.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {7}
}
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