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Title: Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same

Abstract

Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10/sup 12/ protons per cm/sup 3/ and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F/sup +/ luminescence is produced when the crystal is optically excited.

Inventors:
;
Issue Date:
Research Org.:
Oak Ridge National Lab., TN (USA)
OSTI Identifier:
5657153
Application Number:
ON: DE86013697
Assignee:
Dept. of Energy TIC; ERA-11-005255; EDB-86-137404
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; LASERS; OXIDES; QUANTUM EFFICIENCY; CHALCOGENIDES; EFFICIENCY; OXYGEN COMPOUNDS; 420300* - Engineering- Lasers- (-1989)

Citation Formats

Chen, Yok, and Gonzalez, R. Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same. United States: N. p., 1985. Web.
Chen, Yok, & Gonzalez, R. Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same. United States.
Chen, Yok, and Gonzalez, R. Wed . "Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same". United States.
@article{osti_5657153,
title = {Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same},
author = {Chen, Yok and Gonzalez, R.},
abstractNote = {Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10/sup 12/ protons per cm/sup 3/ and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F/sup +/ luminescence is produced when the crystal is optically excited.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {7}
}