Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same
Abstract
Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10/sup 12/ protons per cm/sup 3/ and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F/sup +/ luminescence is produced when the crystal is optically excited.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 5657153
- Application Number:
- ON: DE86013697
- Assignee:
- Dept. of Energy
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; LASERS; OXIDES; QUANTUM EFFICIENCY; CHALCOGENIDES; EFFICIENCY; OXYGEN COMPOUNDS; 420300* - Engineering- Lasers- (-1989)
Citation Formats
Chen, Yok, and Gonzalez, R. Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same. United States: N. p., 1985.
Web.
Chen, Yok, & Gonzalez, R. Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same. United States.
Chen, Yok, and Gonzalez, R. Wed .
"Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same". United States.
@article{osti_5657153,
title = {Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same},
author = {Chen, Yok and Gonzalez, R},
abstractNote = {Refractory oxide crystals having high-quantum efficiency and high thermal stability for use as broadly tunable laser host materials. The crystals are formed by removing hydrogen from a single crystal of the oxide material to a level below about 10/sup 12/ protons per cm/sup 3/ and subsequently thermochemically reducing the oxygen content of the crystal to form sufficient oxygen anion vacancies so that short-lived F/sup +/ luminescence is produced when the crystal is optically excited.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {7}
}
Search for the full text at the U.S. Patent and Trademark Office
Note: You will be redirected to the USPTO site, which may require a pop-up blocker to be deactivated to view the patent. If so, you will need to manually turn off your browser's pop-up blocker, typically found within the browser settings. (See DOE Patents FAQs for more information.)
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.