Electron-beam-induced information storage in hydrogenated amorphous silicon devices
Abstract
A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge collection efficiency and thus in the charge collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage.
- Inventors:
- Issue Date:
- Research Org.:
- Solar Energy Research Inst. (SERI), Golden, CO (United States)
- OSTI Identifier:
- 5656732
- Application Number:
- ON: DE86013791
- Assignee:
- Dept. of Energy
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; ELECTRON PROBES; DESIGN; AMORPHOUS STATE; DEFECTS; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; ELECTRON MICROSCOPY; ELEMENTS; MICROSCOPY; PROBES; SEMIMETALS; 420800* - Engineering- Electronic Circuits & Devices- (-1989)
Citation Formats
Yacobi, B G. Electron-beam-induced information storage in hydrogenated amorphous silicon devices. United States: N. p., 1985.
Web.
Yacobi, B G. Electron-beam-induced information storage in hydrogenated amorphous silicon devices. United States.
Yacobi, B G. Mon .
"Electron-beam-induced information storage in hydrogenated amorphous silicon devices". United States.
@article{osti_5656732,
title = {Electron-beam-induced information storage in hydrogenated amorphous silicon devices},
author = {Yacobi, B G},
abstractNote = {A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge collection efficiency and thus in the charge collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {3}
}
Search for the full text at the U.S. Patent and Trademark Office
Note: You will be redirected to the USPTO site, which may require a pop-up blocker to be deactivated to view the patent. If so, you will need to manually turn off your browser's pop-up blocker, typically found within the browser settings. (See DOE Patents FAQs for more information.)
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.