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Title: Electron-beam-induced information storage in hydrogenated amorphous silicon devices

Abstract

A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge collection efficiency and thus in the charge collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage.

Inventors:
Issue Date:
Research Org.:
Solar Energy Research Inst., Golden, CO (USA)
OSTI Identifier:
5656732
Application Number:
ON: DE86013791
Assignee:
Dept. of Energy TIC; ERA-11-005319; EDB-86-137585
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; ELECTRON PROBES; DESIGN; AMORPHOUS STATE; DEFECTS; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; ELECTRON MICROSCOPY; ELEMENTS; MICROSCOPY; PROBES; SEMIMETALS; 420800* - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Yacobi, B.G. Electron-beam-induced information storage in hydrogenated amorphous silicon devices. United States: N. p., 1985. Web.
Yacobi, B.G. Electron-beam-induced information storage in hydrogenated amorphous silicon devices. United States.
Yacobi, B.G. Mon . "Electron-beam-induced information storage in hydrogenated amorphous silicon devices". United States.
@article{osti_5656732,
title = {Electron-beam-induced information storage in hydrogenated amorphous silicon devices},
author = {Yacobi, B.G.},
abstractNote = {A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge collection efficiency and thus in the charge collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {3}
}