Recovery of Mo/Si multilayer coated optical substrates
Abstract
Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO{sub 2} overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates. 5 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 563699
- Patent Number(s):
- 5698113
- Application Number:
- PAN: 8-607,055; TRN: 98:002118
- Assignee:
- Univ. of California, Oakland, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 16 Dec 1997
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 43 PARTICLE ACCELERATORS; OPTICAL SYSTEMS; MATERIALS RECOVERY; MOLYBDENUM; SILICON; EXTREME ULTRAVIOLET RADIATION; REMOVAL; OPTICAL PROPERTIES; ACCELERATOR FACILITIES; SYNCHROTRON RADIATION SOURCES; COATINGS
Citation Formats
Baker, S L, Vernon, S P, and Stearns, D G. Recovery of Mo/Si multilayer coated optical substrates. United States: N. p., 1997.
Web.
Baker, S L, Vernon, S P, & Stearns, D G. Recovery of Mo/Si multilayer coated optical substrates. United States.
Baker, S L, Vernon, S P, and Stearns, D G. Tue .
"Recovery of Mo/Si multilayer coated optical substrates". United States.
@article{osti_563699,
title = {Recovery of Mo/Si multilayer coated optical substrates},
author = {Baker, S L and Vernon, S P and Stearns, D G},
abstractNote = {Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO{sub 2} overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {12}
}