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Title: Recovery of Mo/Si multilayer coated optical substrates

Abstract

Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO{sub 2} overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates. 5 figs.

Inventors:
; ;
Issue Date:
Research Org.:
Univ. of California (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
563699
Patent Number(s):
5,698,113
Application Number:
PAN: 8-607,055; TRN: 98:002118
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 16 Dec 1997
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; OPTICAL SYSTEMS; MATERIALS RECOVERY; MOLYBDENUM; SILICON; EXTREME ULTRAVIOLET RADIATION; REMOVAL; OPTICAL PROPERTIES; ACCELERATOR FACILITIES; SYNCHROTRON RADIATION SOURCES; COATINGS

Citation Formats

Baker, S L, Vernon, S P, and Stearns, D G. Recovery of Mo/Si multilayer coated optical substrates. United States: N. p., 1997. Web.
Baker, S L, Vernon, S P, & Stearns, D G. Recovery of Mo/Si multilayer coated optical substrates. United States.
Baker, S L, Vernon, S P, and Stearns, D G. Tue . "Recovery of Mo/Si multilayer coated optical substrates". United States.
@article{osti_563699,
title = {Recovery of Mo/Si multilayer coated optical substrates},
author = {Baker, S L and Vernon, S P and Stearns, D G},
abstractNote = {Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO{sub 2} overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {12}
}