skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Compensated amorphous-silicon solar cell

Abstract

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

Inventors:
Issue Date:
OSTI Identifier:
5624356
Application Number:
ON: DE83018087
Assignee:
ERA-08-053787; EDB-83-175715
DOE Contract Number:  
AC02-77CH00178
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; DESIGN; AMORPHOUS STATE; BORON FLUORIDES; GLOW DISCHARGES; HYDROGEN ADDITIONS; BORON COMPOUNDS; DIRECT ENERGY CONVERTERS; ELECTRIC DISCHARGES; EQUIPMENT; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Devaud, G. Compensated amorphous-silicon solar cell. United States: N. p., 1982. Web.
Devaud, G. Compensated amorphous-silicon solar cell. United States.
Devaud, G. Mon . "Compensated amorphous-silicon solar cell". United States.
@article{osti_5624356,
title = {Compensated amorphous-silicon solar cell},
author = {Devaud, G.},
abstractNote = {An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {6}
}