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Title: Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals

Abstract

Apparatus is provided for continuously forming a silicon crystal sheet from a silicon rod in a non-crucible environment. The rod is rotated and fed toward an RF coil in an inert atmosphere so that the upper end of the rod becomes molten and the silicon sheet crystal is pulled therefrom substantially horizontally in a continuous strip. A shorting ring may be provided around the rod to limit the heating to the upper end only. Argon gas can be used to create the inert atmosphere within a suitable closed chamber. By use of this apparatus and method, a substantially defect-free silicon crystal sheet is formed which can be used for micro-circuitry chips or solar cells.

Inventors:
Issue Date:
OSTI Identifier:
5624059
Application Number:
ON: DE85011588
Assignee:
Dept. of Energy EDB-85-086795
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; 14 SOLAR ENERGY; SILICON; CRYSTAL GROWTH; ARGON; RF SYSTEMS; ELEMENTS; FLUIDS; GASES; NONMETALS; RARE GASES; SEMIMETALS; 360601* - Other Materials- Preparation & Manufacture; 420800 - Engineering- Electronic Circuits & Devices- (-1989); 140501 - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Ciszek, T.F. Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals. United States: N. p., 1984. Web.
Ciszek, T.F. Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals. United States.
Ciszek, T.F. Wed . "Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals". United States.
@article{osti_5624059,
title = {Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals},
author = {Ciszek, T.F.},
abstractNote = {Apparatus is provided for continuously forming a silicon crystal sheet from a silicon rod in a non-crucible environment. The rod is rotated and fed toward an RF coil in an inert atmosphere so that the upper end of the rod becomes molten and the silicon sheet crystal is pulled therefrom substantially horizontally in a continuous strip. A shorting ring may be provided around the rod to limit the heating to the upper end only. Argon gas can be used to create the inert atmosphere within a suitable closed chamber. By use of this apparatus and method, a substantially defect-free silicon crystal sheet is formed which can be used for micro-circuitry chips or solar cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {9}
}