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Title: Dopant type and/or concentration selective dry photochemical etching of semiconductor materials

Abstract

Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p-type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (USA)
OSTI Identifier:
5534482
Application Number:
ON: DE86013662
Assignee:
Dept. of Energy
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; ETCHING; LASER RADIATION; PHOTOCHEMICAL REACTIONS; CHEMICAL REACTIONS; ELECTROMAGNETIC RADIATION; MATERIALS; RADIATIONS; SURFACE FINISHING; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Ashby, C R.H., and Dishman, J L. Dopant type and/or concentration selective dry photochemical etching of semiconductor materials. United States: N. p., 1985. Web.
Ashby, C R.H., & Dishman, J L. Dopant type and/or concentration selective dry photochemical etching of semiconductor materials. United States.
Ashby, C R.H., and Dishman, J L. Fri . "Dopant type and/or concentration selective dry photochemical etching of semiconductor materials". United States.
@article{osti_5534482,
title = {Dopant type and/or concentration selective dry photochemical etching of semiconductor materials},
author = {Ashby, C R.H. and Dishman, J L},
abstractNote = {Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p-type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {10}
}