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Title: Planarization of metal films for multilevel interconnects

Abstract

In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

Inventors:
Issue Date:
Research Org.:
Lawrence Livermore National Lab., CA (USA)
OSTI Identifier:
5534461
Application Number:
ON: DE86013747
Assignee:
Dept. of Energy
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; MATERIALS WORKING; INTEGRATED CIRCUITS; FABRICATION; SILICON ALLOYS; LASERS; SILICON; USES; ALLOYS; ELECTRONIC CIRCUITS; ELEMENTS; METALS; MICROELECTRONIC CIRCUITS; SEMIMETALS; 360601* - Other Materials- Preparation & Manufacture; 360101 - Metals & Alloys- Preparation & Fabrication

Citation Formats

Tuckerman, D B. Planarization of metal films for multilevel interconnects. United States: N. p., 1985. Web.
Tuckerman, D B. Planarization of metal films for multilevel interconnects. United States.
Tuckerman, D B. Fri . "Planarization of metal films for multilevel interconnects". United States.
@article{osti_5534461,
title = {Planarization of metal films for multilevel interconnects},
author = {Tuckerman, D B},
abstractNote = {In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {8}
}