Piezoelectric shear wave resonator and method of making same
Abstract
An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppM//sup 0/C.
- Inventors:
- Issue Date:
- Research Org.:
- Ames Laboratory (AMES), Ames, IA (United States)
- OSTI Identifier:
- 5511667
- Application Number:
- ON: DE86013722
- Assignee:
- Dept. of Energy
- DOE Contract Number:
- W-7405-ENG-82
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; RESONATORS; DESIGN; WAVE PROPAGATION; PIEZOELECTRICITY; SEMICONDUCTOR MATERIALS; SHEAR; ELECTRICITY; ELECTRONIC EQUIPMENT; EQUIPMENT; MATERIALS; 420800* - Engineering- Electronic Circuits & Devices- (-1989)
Citation Formats
Wang, J S, Lakin, K M, and Landin, A R. Piezoelectric shear wave resonator and method of making same. United States: N. p., 1985.
Web.
Wang, J S, Lakin, K M, & Landin, A R. Piezoelectric shear wave resonator and method of making same. United States.
Wang, J S, Lakin, K M, and Landin, A R. Mon .
"Piezoelectric shear wave resonator and method of making same". United States.
@article{osti_5511667,
title = {Piezoelectric shear wave resonator and method of making same},
author = {Wang, J S and Lakin, K M and Landin, A R},
abstractNote = {An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppM//sup 0/C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {5}
}