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Title: Sol-gel type synthesis of Bi{sub 2}(Sr,Ta{sub 2})O{sub 9} using an acetate based system

Abstract

A method of forming a layered-perovskite bismuth-strontium-tantalum oxide (SBT) ferroelectric material is performed by dissolving a bismuth compound in a first solvent to form a first solution, mixing a strontium compound and a tantalum compound to form a binary mixture, dissolving the binary mixture in a second solvent to form a second solution, mixing the first solution with the second solution to form a SBT precursor solution, evaporating the first and second solvents to form a SBT precursor material and subsequently sintering said SBT precursor material in the presence of oxygen. 6 figs.

Inventors:
Issue Date:
Research Org.:
Sandia Corporation
OSTI Identifier:
551042
Patent Number(s):
5,683,614
Application Number:
PAN: 8-699,075
Assignee:
Sandia Corp., Alburquerque, NM (United States) SNL; SCA: 360201; PA: EDB-98:002217; SN: 97001886559
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 4 Nov 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH OXIDES; STRONTIUM OXIDES; TANTALUM OXIDES; SOL-GEL PROCESS; SOLVENTS; PRECURSOR; EVAPORATION; SINTERING

Citation Formats

Boyle, T.J. Sol-gel type synthesis of Bi{sub 2}(Sr,Ta{sub 2})O{sub 9} using an acetate based system. United States: N. p., 1997. Web.
Boyle, T.J. Sol-gel type synthesis of Bi{sub 2}(Sr,Ta{sub 2})O{sub 9} using an acetate based system. United States.
Boyle, T.J. Tue . "Sol-gel type synthesis of Bi{sub 2}(Sr,Ta{sub 2})O{sub 9} using an acetate based system". United States.
@article{osti_551042,
title = {Sol-gel type synthesis of Bi{sub 2}(Sr,Ta{sub 2})O{sub 9} using an acetate based system},
author = {Boyle, T.J.},
abstractNote = {A method of forming a layered-perovskite bismuth-strontium-tantalum oxide (SBT) ferroelectric material is performed by dissolving a bismuth compound in a first solvent to form a first solution, mixing a strontium compound and a tantalum compound to form a binary mixture, dissolving the binary mixture in a second solvent to form a second solution, mixing the first solution with the second solution to form a SBT precursor solution, evaporating the first and second solvents to form a SBT precursor material and subsequently sintering said SBT precursor material in the presence of oxygen. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {11}
}