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Title: Process for producing chalcogenide semiconductors

Abstract

A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

Inventors:
;
Issue Date:
Research Org.:
Solar Energy Research Inst. (SERI), Golden, CO (United States)
OSTI Identifier:
5468706
Application Number:
ON: DE86013709
Assignee:
Dept. of Energy
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SEMICONDUCTOR MATERIALS; CHALCOGENIDES; SOLAR CELLS; FABRICATION; DIRECT ENERGY CONVERTERS; EQUIPMENT; MATERIALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Noufi, R, and Chen, Y W. Process for producing chalcogenide semiconductors. United States: N. p., 1985. Web.
Noufi, R, & Chen, Y W. Process for producing chalcogenide semiconductors. United States.
Noufi, R, and Chen, Y W. Tue . "Process for producing chalcogenide semiconductors". United States.
@article{osti_5468706,
title = {Process for producing chalcogenide semiconductors},
author = {Noufi, R and Chen, Y W},
abstractNote = {A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {4}
}

Patent:
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