skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Chemoresistive gas sensor

Abstract

A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron tunneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner.

Inventors:
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
5455550
Application Number:
ON: DE86013766
Assignee:
Dept. of Energy
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; GAS ANALYSIS; TUNNEL EFFECT; ELECTRIC CONDUCTORS; ELECTRODES; ORGANIC SEMICONDUCTORS; MATERIALS; SEMICONDUCTOR MATERIALS; 440300* - Miscellaneous Instruments- (-1989)

Citation Formats

Hirschfeld, T B. Chemoresistive gas sensor. United States: N. p., 1985. Web.
Hirschfeld, T B. Chemoresistive gas sensor. United States.
Hirschfeld, T B. Mon . "Chemoresistive gas sensor". United States.
@article{osti_5455550,
title = {Chemoresistive gas sensor},
author = {Hirschfeld, T B},
abstractNote = {A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron tunneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {9}
}