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Title: InP:Fe photoconducting device

Abstract

A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

Inventors:
; ;
OSTI Identifier:
5444069
Application Number:
ON: DE84005921
Assignee:
EDB-84-031088
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Resource Relation:
Other Information: Portions are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 42 ENGINEERING; INDIUM PHOSPHIDES; IRON ADDITIONS; PHOTOCONDUCTORS; DESIGN; ELECTRIC CONTACTS; GAIN; GERMANIUM ALLOYS; GOLD ALLOYS; TIN ALLOYS; TRANSIENTS; ALLOYS; AMPLIFICATION; ELECTRICAL EQUIPMENT; EQUIPMENT; INDIUM COMPOUNDS; IRON ALLOYS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; 440300* - Miscellaneous Instruments- (-1989); 420800 - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Hammond, R B, Paulter, N G, and Wagner, R S. InP:Fe photoconducting device. United States: N. p., Web.
Hammond, R B, Paulter, N G, & Wagner, R S. InP:Fe photoconducting device. United States.
Hammond, R B, Paulter, N G, and Wagner, R S. . "InP:Fe photoconducting device". United States.
@article{osti_5444069,
title = {InP:Fe photoconducting device},
author = {Hammond, R B and Paulter, N G and Wagner, R S},
abstractNote = {A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {},
month = {}
}