InP:Fe photoconducting device

Hammond, R B; Paulter, N G; Wagner, R S

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Title: InP:Fe photoconducting device

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Abstract

A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

Inventors:: Hammond, R B; Paulter, N G; Wagner, R S

OSTI Identifier:: 5444069

Application Number:: ON: DE84005921

Assignee:: EDB-84-031088

DOE Contract Number:: W-7405-ENG-36

Resource Type:: Patent

Resource Relation:: Other Information: Portions are illegible in microfiche products

Country of Publication:: United States

Language:: English

Subject:: 47 OTHER INSTRUMENTATION; 42 ENGINEERING; INDIUM PHOSPHIDES; IRON ADDITIONS; PHOTOCONDUCTORS; DESIGN; ELECTRIC CONTACTS; GAIN; GERMANIUM ALLOYS; GOLD ALLOYS; TIN ALLOYS; TRANSIENTS; ALLOYS; AMPLIFICATION; ELECTRICAL EQUIPMENT; EQUIPMENT; INDIUM COMPOUNDS; IRON ALLOYS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; 440300* - Miscellaneous Instruments- (-1989); 420800 - Engineering- Electronic Circuits & Devices- (-1989)

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                    Hammond, R B, Paulter, N G, and Wagner, R S. InP:Fe photoconducting device.  United States: N. p.,  
        Web.

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                    Hammond, R B, Paulter, N G, & Wagner, R S. InP:Fe photoconducting device.  United States.

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                    Hammond, R B, Paulter, N G, and Wagner, R S. .  
        "InP:Fe photoconducting device".  United States.

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@article{osti_5444069,

  title        = {InP:Fe photoconducting device},

  author       = {Hammond, R B and Paulter, N G and Wagner, R S},

  abstractNote = {A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {},

  month        = {}

}

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InP:Fe Photoconducting device

Patent Hammond, Robert B [Los Alamos, NM]; Paulter, Nicholas G [Albuquerque, NM]; Wagner, Ronald S [Los Alamos, NM]

A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.
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Transient photoconductive response of InP:Fe

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We present experimental transient response data for iron-doped indium phosphide (InP:Fe) photoconductors subject to impulse and rectangular-pulse excitation over a wide range of excitation intensities. The detector response shape is observed to depend strongly on the excitation intensity. We present a model for bulk-material response based on the dynamics of electron and hole trapping and recombination on the deep-level iron impurities. The model qualitatively reproduces the observed experimental behavior.
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