Microwave plasma assisted supersonic gas jet deposition of thin film materials
Abstract
An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 5440680
- Patent Number(s):
- 5256205
- Application Number:
- PPN: US 7-817518
- Assignee:
- Jet Process Corp., New Haven, CT (United States)
- DOE Contract Number:
- FG02-88ER13818
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 7 Jan 1992
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; THIN FILMS; PHYSICAL VAPOR DEPOSITION; MICROWAVE RADIATION; PERFORMANCE; VAPOR DEPOSITED COATINGS; COATINGS; DEPOSITION; ELECTROMAGNETIC RADIATION; FILMS; RADIATIONS; SURFACE COATING; 360101* - Metals & Alloys- Preparation & Fabrication; 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 360601 - Other Materials- Preparation & Manufacture
Citation Formats
Schmitt, III, J J, and Halpern, B L. Microwave plasma assisted supersonic gas jet deposition of thin film materials. United States: N. p., 1993.
Web.
Schmitt, III, J J, & Halpern, B L. Microwave plasma assisted supersonic gas jet deposition of thin film materials. United States.
Schmitt, III, J J, and Halpern, B L. Tue .
"Microwave plasma assisted supersonic gas jet deposition of thin film materials". United States.
@article{osti_5440680,
title = {Microwave plasma assisted supersonic gas jet deposition of thin film materials},
author = {Schmitt, III, J J and Halpern, B L},
abstractNote = {An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {10}
}
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