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Title: Microwave plasma assisted supersonic gas jet deposition of thin film materials

Abstract

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

Inventors:
;
Issue Date:
OSTI Identifier:
5440680
Patent Number(s):
5256205
Application Number:
PPN: US 7-817518
Assignee:
Jet Process Corp., New Haven, CT (United States)
DOE Contract Number:  
FG02-88ER13818
Resource Type:
Patent
Resource Relation:
Patent File Date: 7 Jan 1992
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; THIN FILMS; PHYSICAL VAPOR DEPOSITION; MICROWAVE RADIATION; PERFORMANCE; VAPOR DEPOSITED COATINGS; COATINGS; DEPOSITION; ELECTROMAGNETIC RADIATION; FILMS; RADIATIONS; SURFACE COATING; 360101* - Metals & Alloys- Preparation & Fabrication; 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 360601 - Other Materials- Preparation & Manufacture

Citation Formats

Schmitt, III, J J, and Halpern, B L. Microwave plasma assisted supersonic gas jet deposition of thin film materials. United States: N. p., 1993. Web.
Schmitt, III, J J, & Halpern, B L. Microwave plasma assisted supersonic gas jet deposition of thin film materials. United States.
Schmitt, III, J J, and Halpern, B L. Tue . "Microwave plasma assisted supersonic gas jet deposition of thin film materials". United States.
@article{osti_5440680,
title = {Microwave plasma assisted supersonic gas jet deposition of thin film materials},
author = {Schmitt, III, J J and Halpern, B L},
abstractNote = {An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {10}
}