Narrow band gap amorphous silicon semiconductors
Abstract
Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.
- Inventors:
- Issue Date:
- Research Org.:
- Solar Energy Research Inst. (SERI), Golden, CO (United States)
- OSTI Identifier:
- 5421013
- Application Number:
- ON: DE85017753
- Assignee:
- Dept. of Energy
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; N-TYPE CONDUCTORS; CRYSTAL DOPING; SILICON; AMORPHOUS STATE; DOPED MATERIALS; FABRICATION; GERMANIUM; LEAD; TIN; ELEMENTS; MATERIALS; METALS; SEMICONDUCTOR MATERIALS; SEMIMETALS; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture
Citation Formats
Madan, A, and Mahan, A H. Narrow band gap amorphous silicon semiconductors. United States: N. p., 1985.
Web.
Madan, A, & Mahan, A H. Narrow band gap amorphous silicon semiconductors. United States.
Madan, A, and Mahan, A H. Thu .
"Narrow band gap amorphous silicon semiconductors". United States.
@article{osti_5421013,
title = {Narrow band gap amorphous silicon semiconductors},
author = {Madan, A and Mahan, A H},
abstractNote = {Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 10 00:00:00 EST 1985},
month = {Thu Jan 10 00:00:00 EST 1985}
}