Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

Title: Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

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Abstract

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

Inventors:: Madan, A

Issue Date:: 1984-12-10

Research Org.:: Solar Energy Research Inst. (SERI), Golden, CO (United States)

OSTI Identifier:: 5421009

Application Number:: ON: DE85017736

Assignee:: Dept. of Energy

DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SEMICONDUCTOR JUNCTIONS; FABRICATION; SILICON SOLAR CELLS; AMORPHOUS STATE; DEPOSITION; DOPED MATERIALS; SEMICONDUCTOR MATERIALS; SILICON; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; JUNCTIONS; MATERIALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture

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                    Madan, A. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors.  United States: N. p., 1984. 
        Web.

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                    Madan, A. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors.  United States.

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                    Madan, A. Mon .  
        "Improved method of preparing p-i-n junctions in amorphous silicon semiconductors".  United States.

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@article{osti_5421009,

  title        = {Improved method of preparing p-i-n junctions in amorphous silicon semiconductors},

  author       = {Madan, A},

  abstractNote = {A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1984},

  month        = {12}

}

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