Transmissive metallic contact for amorphous silicon solar cells

Title: Transmissive metallic contact for amorphous silicon solar cells

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Abstract

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Inventors:: Madan, A.

Issue Date:: 1984-11-29

Research Org.:: Solar Energy Research Inst., Golden, CO (USA)

OSTI Identifier:: 5420981

Application Number:: ON: DE85017724

Assignee:: Dept. of Energy EDB-85-146779

DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; ELECTRIC CONTACTS; FABRICATION; SILICON SOLAR CELLS; ALUMINIUM; AMORPHOUS STATE; ANTIREFLECTION COATINGS; GLASS; LIGHT TRANSMISSION; SILICON; COATINGS; DIRECT ENERGY CONVERTERS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; METALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

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                    Madan, A. Transmissive metallic contact for amorphous silicon solar cells.  United States: N. p., 1984. 
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                    Madan, A. Transmissive metallic contact for amorphous silicon solar cells.  United States.

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                    Madan, A. Thu .  
        "Transmissive metallic contact for amorphous silicon solar cells".  United States.

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@article{osti_5420981,

  title        = {Transmissive metallic contact for amorphous silicon solar cells},

  author       = {Madan, A.},

  abstractNote = {A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1984},

  month        = {11}

}

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