Transmissive metallic contact for amorphous silicon solar cells

Title: Transmissive metallic contact for amorphous silicon solar cells

Full Record
Other Related Research

Abstract

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Inventors:: Madan, A

Issue Date:: 1984-11-29

Research Org.:: Solar Energy Research Inst. (SERI), Golden, CO (United States)

OSTI Identifier:: 5420981

Application Number:: ON: DE85017724

Assignee:: Dept. of Energy

DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; ELECTRIC CONTACTS; FABRICATION; SILICON SOLAR CELLS; ALUMINIUM; AMORPHOUS STATE; ANTIREFLECTION COATINGS; GLASS; LIGHT TRANSMISSION; SILICON; COATINGS; DIRECT ENERGY CONVERTERS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; METALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats


                    Madan, A. Transmissive metallic contact for amorphous silicon solar cells.  United States: N. p., 1984. 
        Web.

Copy to clipboard


                    Madan, A. Transmissive metallic contact for amorphous silicon solar cells.  United States.

Copy to clipboard


                    Madan, A. Thu .  
        "Transmissive metallic contact for amorphous silicon solar cells".  United States.

Copy to clipboard


                    
@article{osti_5420981,

  title        = {Transmissive metallic contact for amorphous silicon solar cells},

  author       = {Madan, A},

  abstractNote = {A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1984},

  month        = {11}

}

Copy to clipboard

Patent:

Search for the full text at the U.S. Patent and Trademark Office

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Amorphous silicon solar cell allowing infrared transmission

Patent Carlson, David E [Yardley, PA]

An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.
Full Text Available
Metal electrode for amorphous silicon solar cells

Patent Williams, Richard [Princeton, NJ]

An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.
Full Text Available
Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

Patent Carlson, David E [Yardley, PA]; Wronski, Christopher R [Princeton, NJ]

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase themore »« less
Full Text Available
Three dimensional amorphous silicon/microcrystalline silicon solar cells

Patent Kaschmitter, J L

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.
Transmission Electron Microscopy Studies of Transition Metal Oxides Employed as Carrier Selective Contacts in Silicon Solar Cells

Conference Ali, H; Bullock, J; Gregory, G; ...

© 2018 IEEE. The focus of this work is on the nano-scale characterization of transition metal oxides employed as carrier selective contacts in crystalline silicon (c-Si) solar cells using crosssectional transmission electron microscopy (TEM). Both electronselective (titanium dioxide, TiO 2 ) and hole-selective (molybdenum oxide, MoO x ; tungsten oxide, WO x textbf) contacts were investigated. High-resolution TEM (HRTEM) images were obtained with a FEI Tecnai F30 TEM.
DOI: https://doi.org/10.1109/PVSC.2018.8547689

Full Text Available

Similar Records