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Title: System level latchup mitigation for single event and transient radiation effects on electronics

Abstract

A ``blink`` technique, analogous to a person blinking at a flash of bright light, is provided for mitigating the effects of single event current latchup and prompt pulse destructive radiation on a micro-electronic circuit. The system includes event detection circuitry, power dump logic circuitry, and energy limiting measures with autonomous recovery. The event detection circuitry includes ionizing radiation pulse detection means for detecting a pulse of ionizing radiation and for providing at an output terminal thereof a detection signal indicative of the detection of a pulse of ionizing radiation. The current sensing circuitry is coupled to the power bus for determining an occurrence of excess current through the power bus caused by ionizing radiation or by ion-induced destructive latchup of a semiconductor device. The power dump circuitry includes power dump logic circuitry having a first input terminal connected to the output terminal of the ionizing radiation pulse detection circuitry and having a second input terminal connected to the output terminal of the current sensing circuitry. The power dump logic circuitry provides an output signal to the input terminal of the circuitry for opening the power bus and the circuitry for shorting the power bus to a ground potential to removemore » power from the power bus. The energy limiting circuitry with autonomous recovery includes circuitry for opening the power bus and circuitry for shorting the power bus to a ground potential. The circuitry for opening the power bus and circuitry for shorting the power bus to a ground potential includes a series FET and a shunt FET. The invention provides for self-contained sensing for latchup, first removal of power to protect latched components, and autonomous recovery to enable transparent operation of other system elements. 18 figs.« less

Inventors:
;
Issue Date:
Research Org.:
University of California
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
541760
Patent Number(s):
5,672,918
Application Number:
PAN: 8-291,086
Assignee:
Dept. of Energy, Washington, DC (United States) PTO; SCA: 426000; PA: EDB-97:142058; SN: 97001865616
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 30 Sep 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; MICROELECTRONIC CIRCUITS; EQUIPMENT PROTECTION DEVICES; PHYSICAL RADIATION EFFECTS; MITIGATION; RADIATION DETECTION; ELECTRICAL FAULTS

Citation Formats

Kimbrough, J.R., and Colella, N.J. System level latchup mitigation for single event and transient radiation effects on electronics. United States: N. p., 1997. Web.
Kimbrough, J.R., & Colella, N.J. System level latchup mitigation for single event and transient radiation effects on electronics. United States.
Kimbrough, J.R., and Colella, N.J. Tue . "System level latchup mitigation for single event and transient radiation effects on electronics". United States.
@article{osti_541760,
title = {System level latchup mitigation for single event and transient radiation effects on electronics},
author = {Kimbrough, J.R. and Colella, N.J.},
abstractNote = {A ``blink`` technique, analogous to a person blinking at a flash of bright light, is provided for mitigating the effects of single event current latchup and prompt pulse destructive radiation on a micro-electronic circuit. The system includes event detection circuitry, power dump logic circuitry, and energy limiting measures with autonomous recovery. The event detection circuitry includes ionizing radiation pulse detection means for detecting a pulse of ionizing radiation and for providing at an output terminal thereof a detection signal indicative of the detection of a pulse of ionizing radiation. The current sensing circuitry is coupled to the power bus for determining an occurrence of excess current through the power bus caused by ionizing radiation or by ion-induced destructive latchup of a semiconductor device. The power dump circuitry includes power dump logic circuitry having a first input terminal connected to the output terminal of the ionizing radiation pulse detection circuitry and having a second input terminal connected to the output terminal of the current sensing circuitry. The power dump logic circuitry provides an output signal to the input terminal of the circuitry for opening the power bus and the circuitry for shorting the power bus to a ground potential to remove power from the power bus. The energy limiting circuitry with autonomous recovery includes circuitry for opening the power bus and circuitry for shorting the power bus to a ground potential. The circuitry for opening the power bus and circuitry for shorting the power bus to a ground potential includes a series FET and a shunt FET. The invention provides for self-contained sensing for latchup, first removal of power to protect latched components, and autonomous recovery to enable transparent operation of other system elements. 18 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {9}
}