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Title: Process for preparing group Ib-IIIa-VIa semiconducting films

Abstract

Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells. 4 figs.

Inventors:
; ; ;
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Org.:
National Renewable Energy Lab., Golden, CO (United States)
OSTI Identifier:
541758
Patent Number(s):
5,674,555
Application Number:
PAN: 8-564,957
Assignee:
Univ. of Delaware, Newark, DE (United States)
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 7 Oct 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SOLAR ABSORBERS; SURFACE COATING; SUBSTRATES; ANNEALING; CONTROLLED ATMOSPHERES

Citation Formats

Birkmire, R W, Schultz, J M, Marudachalam, M, and Hichri, H. Process for preparing group Ib-IIIa-VIa semiconducting films. United States: N. p., 1997. Web.
Birkmire, R W, Schultz, J M, Marudachalam, M, & Hichri, H. Process for preparing group Ib-IIIa-VIa semiconducting films. United States.
Birkmire, R W, Schultz, J M, Marudachalam, M, and Hichri, H. Tue . "Process for preparing group Ib-IIIa-VIa semiconducting films". United States.
@article{osti_541758,
title = {Process for preparing group Ib-IIIa-VIa semiconducting films},
author = {Birkmire, R W and Schultz, J M and Marudachalam, M and Hichri, H},
abstractNote = {Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells. 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {10}
}