Process for preparing group Ib-IIIa-VIa semiconducting films
Abstract
Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells. 4 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- Sponsoring Org.:
- National Renewable Energy Lab., Golden, CO (United States)
- OSTI Identifier:
- 541758
- Patent Number(s):
- 5674555
- Application Number:
- PAN: 8-564,957
- Assignee:
- Univ. of Delaware, Newark, DE (United States)
- DOE Contract Number:
- AC36-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 7 Oct 1997
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SOLAR ABSORBERS; SURFACE COATING; SUBSTRATES; ANNEALING; CONTROLLED ATMOSPHERES
Citation Formats
Birkmire, R W, Schultz, J M, Marudachalam, M, and Hichri, H. Process for preparing group Ib-IIIa-VIa semiconducting films. United States: N. p., 1997.
Web.
Birkmire, R W, Schultz, J M, Marudachalam, M, & Hichri, H. Process for preparing group Ib-IIIa-VIa semiconducting films. United States.
Birkmire, R W, Schultz, J M, Marudachalam, M, and Hichri, H. Tue .
"Process for preparing group Ib-IIIa-VIa semiconducting films". United States.
@article{osti_541758,
title = {Process for preparing group Ib-IIIa-VIa semiconducting films},
author = {Birkmire, R W and Schultz, J M and Marudachalam, M and Hichri, H},
abstractNote = {Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells. 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {10}
}
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