Photodetectors using III-V nitrides
Abstract
A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Radiation Monitoring Devices
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 541754
- Patent Number(s):
- 5677538
- Application Number:
- PAN: 8-499,710
- Assignee:
- Boston Univ., MA (United States)
- DOE Contract Number:
- FG02-94ER81843
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 14 Oct 1997
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; PHOTODETECTORS; NITRIDES; DESIGN; SEMICONDUCTOR MATERIALS; ELECTRICAL PROPERTIES; MOLECULAR BEAM EPITAXY
Citation Formats
Moustakas, T D, and Misra, M. Photodetectors using III-V nitrides. United States: N. p., 1997.
Web.
Moustakas, T D, & Misra, M. Photodetectors using III-V nitrides. United States.
Moustakas, T D, and Misra, M. Tue .
"Photodetectors using III-V nitrides". United States.
@article{osti_541754,
title = {Photodetectors using III-V nitrides},
author = {Moustakas, T D and Misra, M},
abstractNote = {A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {10}
}
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