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Title: Photodetectors using III-V nitrides

Abstract

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.

Inventors:
;
Issue Date:
Research Org.:
Radiation Monitoring Devices
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
541754
Patent Number(s):
5,677,538
Application Number:
PAN: 8-499,710
Assignee:
Boston Univ., MA (United States) PTO; SCA: 440000; PA: EDB-97:142117; SN: 97001865600
DOE Contract Number:  
FG02-94ER81843
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 14 Oct 1997
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; PHOTODETECTORS; NITRIDES; DESIGN; SEMICONDUCTOR MATERIALS; ELECTRICAL PROPERTIES; MOLECULAR BEAM EPITAXY

Citation Formats

Moustakas, T.D., and Misra, M. Photodetectors using III-V nitrides. United States: N. p., 1997. Web.
Moustakas, T.D., & Misra, M. Photodetectors using III-V nitrides. United States.
Moustakas, T.D., and Misra, M. Tue . "Photodetectors using III-V nitrides". United States.
@article{osti_541754,
title = {Photodetectors using III-V nitrides},
author = {Moustakas, T.D. and Misra, M.},
abstractNote = {A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {10}
}