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Title: Semiconductor tunnel junction with enhancement layer

Abstract

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling. 5 figs.

Inventors:
;
Issue Date:
Research Org.:
Sandia Corporation
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
541750
Patent Number(s):
5,679,963
Application Number:
PAN: 8-567,678
Assignee:
Sandia Corp., Albuquerque, NM (United States) SNL; SCA: 426000; PA: EDB-97:142056; SN: 97001865588
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 21 Oct 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR JUNCTIONS; TUNNEL DIODES; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; DESIGN

Citation Formats

Klem, J.F., and Zolper, J.C. Semiconductor tunnel junction with enhancement layer. United States: N. p., 1997. Web.
Klem, J.F., & Zolper, J.C. Semiconductor tunnel junction with enhancement layer. United States.
Klem, J.F., and Zolper, J.C. Tue . "Semiconductor tunnel junction with enhancement layer". United States.
@article{osti_541750,
title = {Semiconductor tunnel junction with enhancement layer},
author = {Klem, J.F. and Zolper, J.C.},
abstractNote = {The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {10}
}