Semiconductor tunnel junction with enhancement layer
Abstract
The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling. 5 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 541750
- Patent Number(s):
- 5679963
- Application Number:
- PAN: 8-567,678
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 21 Oct 1997
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR JUNCTIONS; TUNNEL DIODES; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; DESIGN
Citation Formats
Klem, J F, and Zolper, J C. Semiconductor tunnel junction with enhancement layer. United States: N. p., 1997.
Web.
Klem, J F, & Zolper, J C. Semiconductor tunnel junction with enhancement layer. United States.
Klem, J F, and Zolper, J C. Tue .
"Semiconductor tunnel junction with enhancement layer". United States.
@article{osti_541750,
title = {Semiconductor tunnel junction with enhancement layer},
author = {Klem, J F and Zolper, J C},
abstractNote = {The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 21 00:00:00 EDT 1997},
month = {Tue Oct 21 00:00:00 EDT 1997}
}
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