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Title: Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals

Abstract

A process for preparing CuInSe/sub 2/ crystals includes melting a sufficient quantity of B/sub 2/O/sub 2/ along with stochiometric quantities of Cu, In, and Se in a crucible in a high-pressure atmosphere of inert gas to encapsulate the CuInSe/sub 2/ melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2% over the stochiometric quantity is preferred to make up for small amounts of Se lost in the process. The melt can then be cooled slowly to form the crystal as direct solidification, or the crystal can be grown by inserting a seed crystal through the B/sub 2/O/sub 3/ encapsulate into contact with the CuInSe/sub 2/ melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

Inventors:
Issue Date:
Research Org.:
Solar Energy Research Inst., Golden, CO (USA)
OSTI Identifier:
5414688
Application Number:
ON: DE85017729
Assignee:
Dept. of Energy EDB-85-148131
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COPPER SELENIDES; CRYSTAL GROWTH; INDIUM SELENIDES; BORON OXIDES; BORON COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; INDIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SELENIDES; SELENIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Ciszek, T.F. Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals. United States: N. p., 1984. Web.
Ciszek, T.F. Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals. United States.
Ciszek, T.F. Thu . "Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals". United States.
@article{osti_5414688,
title = {Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals},
author = {Ciszek, T.F.},
abstractNote = {A process for preparing CuInSe/sub 2/ crystals includes melting a sufficient quantity of B/sub 2/O/sub 2/ along with stochiometric quantities of Cu, In, and Se in a crucible in a high-pressure atmosphere of inert gas to encapsulate the CuInSe/sub 2/ melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2% over the stochiometric quantity is preferred to make up for small amounts of Se lost in the process. The melt can then be cooled slowly to form the crystal as direct solidification, or the crystal can be grown by inserting a seed crystal through the B/sub 2/O/sub 3/ encapsulate into contact with the CuInSe/sub 2/ melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {11}
}