Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals

Title: Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals

Full Record
Other Related Research

Abstract

A process for preparing CuInSe/sub 2/ crystals includes melting a sufficient quantity of B/sub 2/O/sub 2/ along with stochiometric quantities of Cu, In, and Se in a crucible in a high-pressure atmosphere of inert gas to encapsulate the CuInSe/sub 2/ melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2% over the stochiometric quantity is preferred to make up for small amounts of Se lost in the process. The melt can then be cooled slowly to form the crystal as direct solidification, or the crystal can be grown by inserting a seed crystal through the B/sub 2/O/sub 3/ encapsulate into contact with the CuInSe/sub 2/ melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

Inventors:: Ciszek, T.F.

Issue Date:: 1984-11-29

Research Org.:: Solar Energy Research Inst., Golden, CO (USA)

OSTI Identifier:: 5414688

Application Number:: ON: DE85017729

Assignee:: Dept. of Energy EDB-85-148131

DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; COPPER SELENIDES; CRYSTAL GROWTH; INDIUM SELENIDES; BORON OXIDES; BORON COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; INDIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SELENIDES; SELENIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; 360601* - Other Materials- Preparation & Manufacture

Citation Formats


                    Ciszek, T.F. Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals.  United States: N. p., 1984. 
        Web.

Copy to clipboard


                    Ciszek, T.F. Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals.  United States.

Copy to clipboard


                    Ciszek, T.F. Thu .  
        "Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals".  United States.

Copy to clipboard


                    
@article{osti_5414688,

  title        = {Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals},

  author       = {Ciszek, T.F.},

  abstractNote = {A process for preparing CuInSe/sub 2/ crystals includes melting a sufficient quantity of B/sub 2/O/sub 2/ along with stochiometric quantities of Cu, In, and Se in a crucible in a high-pressure atmosphere of inert gas to encapsulate the CuInSe/sub 2/ melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2% over the stochiometric quantity is preferred to make up for small amounts of Se lost in the process. The melt can then be cooled slowly to form the crystal as direct solidification, or the crystal can be grown by inserting a seed crystal through the B/sub 2/O/sub 3/ encapsulate into contact with the CuInSe/sub 2/ melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1984},

  month        = {11}

}

Copy to clipboard

Patent:

Search for the full text at the U.S. Patent and Trademark Office

Save / Share:

Export Metadata

Save to My Library

Similar records in DOE Patents and OSTI.GOV collections:

Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals

Patent Ciszek, T.F.

This patent describes the process of preparing a CuInSe/sub 2/ crystal substantially free of fissures, cracks and contamination from B/sub 2/O/sub 3/ and SiO/sub 2/, the process comprising the steps of: placing stoichiometric quantities of Cu, In, and Se in a refractory quartz crucible; placing a sufficient quantity of B/sub 2/O/sub 3/ in the crucible over the Cu, In, and Se to completely surround the Cu, In, and Se when melted to a liquid and to substantially prevent a reaction between the CuInSe/sub 2/ crystal and the quartz crucible; placing the crucible containing the Cu, In, Se, and B/sub 2/O/submore »« less
Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals

Patent Ciszek, Theodore F. (Evergreen, CO)

A process for preparing CuInSe.sub.2 crystals includes melting a sufficient quantity of B.sub.2 O.sub.3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe.sub.2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B.sub.2 O.sub.3 encapsulate into contact with the CuInSe.sub.2 melt and withdrawing the seed upwardly tomore »« less
Full Text Available
Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

Patent Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; ...

Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.
Full Text Available
Method and apparatus for synthesizing HMX and N/sub 2/O/sub 5/. [Patent application; cyclotetramethylenetetraamine]

Patent McGuire, R.R.; Coon, C.L.; Harrar, J.E.; ...

A method and apparatus for electrochemically synthesizing N/sub 2/O/sub 5/ includes oxidizing a solution of N/sub 2/O/sub 4//HNO/sub 3/ at an anode, while maintaining a controlled potential between the N/sub 2/O/sub 4//HNO/sub 3/ solution and the anode. A potential of about 1.35 to 2.0V vs. SCE is preferred, while a potential of about 1.80V vs. SCE is most preferred. Thereafter, the N/sub 2/O/sub 5/ is reacted with either 1.5-diacetyl-3,7-dinitro-1,3,5,7-tetraazacyclooctane (DADN) or 1,3,5,7-tetraacetyl-1,3,5,7-tetraazacyclooctane (TAT) to form cyclotetramethylenetetraamine (HMX).
Method for synthesizing N/sub 2/O/sub 5/

Patent McGuire, R. R.; Coon, C. L.; Harrar, J. E.; ...

A method and apparatus for electrochemically synthesizing N/sub 2/O/sub 5/ includes oxidizing a solution of N/sub 2/O/sub 4//HNO/sub 3/ at an anode, while maintaining a controlled potential between the N/sub 2/O/sub 4//HNO/sub 3/ solution and the anode. A potential of about 1.35 to 2.0 V vs. SCE is preferred, while a potential of about 1.80 V vs. SCE is most preferred. Thereafter, the N/sub 2/O/sub 5/ is reacted with either 1.5-diacetyl-3, 7-dinitro-1,3,5,7-tetraazacyclooctane (DADN) or 1,3,5,7-tetraacetyl-1,3,5,7-tetraazacyclooctane (TAT) to form cyclotetramethylenetetraamine (HMX).

Similar Records