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Title: Chemical synthesis of thin films and supported crystals by oxidation of zintl anions

Abstract

Processes are described for (1) depositing main group metals on inorganic and metallic substrates, (2) depositing transition metals on organic, inorganic and metallic substrates, and (3) depositing combinations of main group metals and transition metals on organic, inorganic and metallic substrates. The resulting products have useful electrical, optical and/or decorative properties.

Inventors:
OSTI Identifier:
5383605
Application Number:
ON: DE84005954
Assignee:
ERA-09-012375; EDB-84-036614
DOE Contract Number:  
W-31-109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; METALS; DEPOSITION; PLATING; SUBSTRATES; ELEMENTS; SURFACE COATING; 360101* - Metals & Alloys- Preparation & Fabrication

Citation Formats

Haushalter, R.C. Chemical synthesis of thin films and supported crystals by oxidation of zintl anions. United States: N. p., Web.
Haushalter, R.C. Chemical synthesis of thin films and supported crystals by oxidation of zintl anions. United States.
Haushalter, R.C. . "Chemical synthesis of thin films and supported crystals by oxidation of zintl anions". United States.
@article{osti_5383605,
title = {Chemical synthesis of thin films and supported crystals by oxidation of zintl anions},
author = {Haushalter, R.C.},
abstractNote = {Processes are described for (1) depositing main group metals on inorganic and metallic substrates, (2) depositing transition metals on organic, inorganic and metallic substrates, and (3) depositing combinations of main group metals and transition metals on organic, inorganic and metallic substrates. The resulting products have useful electrical, optical and/or decorative properties.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {},
month = {}
}