Chemical synthesis of thin films and supported crystals by oxidation of zintl anions
Abstract
Processes are described for (1) depositing main group metals on inorganic and metallic substrates, (2) depositing transition metals on organic, inorganic and metallic substrates, and (3) depositing combinations of main group metals and transition metals on organic, inorganic and metallic substrates. The resulting products have useful electrical, optical and/or decorative properties.
- Inventors:
- OSTI Identifier:
- 5383605
- Application Number:
- ON: DE84005954
- Assignee:
- ERA-09-012375; EDB-84-036614
- DOE Contract Number:
- W-31-109-ENG-38
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; METALS; DEPOSITION; PLATING; SUBSTRATES; ELEMENTS; SURFACE COATING; 360101* - Metals & Alloys- Preparation & Fabrication
Citation Formats
Haushalter, R C. Chemical synthesis of thin films and supported crystals by oxidation of zintl anions. United States: N. p.,
Web.
Haushalter, R C. Chemical synthesis of thin films and supported crystals by oxidation of zintl anions. United States.
Haushalter, R C. .
"Chemical synthesis of thin films and supported crystals by oxidation of zintl anions". United States.
@article{osti_5383605,
title = {Chemical synthesis of thin films and supported crystals by oxidation of zintl anions},
author = {Haushalter, R C},
abstractNote = {Processes are described for (1) depositing main group metals on inorganic and metallic substrates, (2) depositing transition metals on organic, inorganic and metallic substrates, and (3) depositing combinations of main group metals and transition metals on organic, inorganic and metallic substrates. The resulting products have useful electrical, optical and/or decorative properties.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {},
month = {}
}
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