Process for fabricating ZnO-based varistors
Abstract
The invention is a process for producing ZnO-based varistors incorporating a metal oxide dopant. In one form, the invention comprises providing a varistor powder mix of colloidal particles of ZnO and metal-oxide dopants including Bi/sub 2/O/sub 3/. The mix is hot-pressed to form a compact at temperatures below 850/sup 0/C and under conditions effecting reduction of the ZnO to sub-stoichiometric oxide. This promotes densification while restricting liquid formation and grain growth. The compact then is heated under conditions restoring the zinc oxide to stoichiometric composition, thus improving the varistor properties of the compact. The process produces fine-grain varistors characterized by a high actual breakdown voltage and a high average breakdown voltage per individual grain boundary.
- Inventors:
- OSTI Identifier:
- 5380892
- Application Number:
- ON: DE84005981
- Assignee:
- EDB-84-037456
- DOE Contract Number:
- W-7405-ENG-26
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; SEMICONDUCTOR RESISTORS; FABRICATION; BISMUTH OXIDES; BREAKDOWN; COMPACTING; CRYSTAL DOPING; GRAIN SIZE; ZINC OXIDES; BISMUTH COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; ELECTRICAL EQUIPMENT; EQUIPMENT; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; RESISTORS; SEMICONDUCTOR DEVICES; SIZE; ZINC COMPOUNDS; 420800* - Engineering- Electronic Circuits & Devices- (-1989)
Citation Formats
Lauf, R J. Process for fabricating ZnO-based varistors. United States: N. p.,
Web.
Lauf, R J. Process for fabricating ZnO-based varistors. United States.
Lauf, R J. .
"Process for fabricating ZnO-based varistors". United States.
@article{osti_5380892,
title = {Process for fabricating ZnO-based varistors},
author = {Lauf, R J},
abstractNote = {The invention is a process for producing ZnO-based varistors incorporating a metal oxide dopant. In one form, the invention comprises providing a varistor powder mix of colloidal particles of ZnO and metal-oxide dopants including Bi/sub 2/O/sub 3/. The mix is hot-pressed to form a compact at temperatures below 850/sup 0/C and under conditions effecting reduction of the ZnO to sub-stoichiometric oxide. This promotes densification while restricting liquid formation and grain growth. The compact then is heated under conditions restoring the zinc oxide to stoichiometric composition, thus improving the varistor properties of the compact. The process produces fine-grain varistors characterized by a high actual breakdown voltage and a high average breakdown voltage per individual grain boundary.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {},
month = {}
}