skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Decomposition of silane on tungsten or other materials

Abstract

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, from a W or foil heated to a temperature of about 1400 to 1600/sup 0/C, in a vacuum of about 10-/sup 6/ to 10-/sup 4/ torr. A gaseous mixture is formed of atomic hydrogen and atomic silicon. The gaseous mixture is deposited onto a substrate independent of and outside the source of thermal decomposition. Hydrogenated amorphous silicon is formed. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

Inventors:
OSTI Identifier:
5374684
Assignee:
TIC; ERA-05-024364; EDB-80-066799
DOE Contract Number:  
EY-76-C-02-0016
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SILICON; PHOTOCONDUCTIVITY; PRODUCTION; AMORPHOUS STATE; CARBON; DECOMPOSITION; ELECTRICAL PROPERTIES; HIGH VACUUM; HYDROGENATION; IMPURITIES; PASSIVATION; PHOTOVOLTAIC CELLS; SEMICONDUCTOR MATERIALS; SILANES; SUBSTRATES; TUNGSTEN; CHEMICAL REACTIONS; DIRECT ENERGY CONVERTERS; ELECTRIC CONDUCTIVITY; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; MATERIALS; METALS; NONMETALS; PHOTOELECTRIC CELLS; PHYSICAL PROPERTIES; REFRACTORY METALS; SEMIMETALS; SILICON COMPOUNDS; TRANSITION ELEMENTS; 360101* - Metals & Alloys- Preparation & Fabrication; 360104 - Metals & Alloys- Physical Properties; 140501 - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Wiesmann, H.J. Decomposition of silane on tungsten or other materials. United States: N. p., Web.
Wiesmann, H.J. Decomposition of silane on tungsten or other materials. United States.
Wiesmann, H.J. . "Decomposition of silane on tungsten or other materials". United States.
@article{osti_5374684,
title = {Decomposition of silane on tungsten or other materials},
author = {Wiesmann, H.J.},
abstractNote = {This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, from a W or foil heated to a temperature of about 1400 to 1600/sup 0/C, in a vacuum of about 10-/sup 6/ to 10-/sup 4/ torr. A gaseous mixture is formed of atomic hydrogen and atomic silicon. The gaseous mixture is deposited onto a substrate independent of and outside the source of thermal decomposition. Hydrogenated amorphous silicon is formed. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {},
month = {}
}