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Title: Thermal decomposition of silane to form hydrogenated amorphous Si

Abstract

Hydrogenated amorphous silicon is produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, at elevated temperatures of about 1700 to 2300/sup 0/C, in a vacuum of about 10/sup -8/ to 10/sup -4/ torr. A gaseous mixture is formed of atomic hydrogen and atomic silicon. The gaseous mixture is deposited onto a substrate to form hydrogenated amorphous silicon.

Inventors:
; ; ; ;
OSTI Identifier:
5374683
Assignee:
TIC; ERA-05-024367; EDB-80-066802
DOE Contract Number:  
EY-76-C-02-0016
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SILANES; DECOMPOSITION; SILICON; AMORPHOUS STATE; PRODUCTION; HYDROGENATION; MATERIALS; PHOTOVOLTAIC CELLS; CHEMICAL REACTIONS; DIRECT ENERGY CONVERTERS; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; PHOTOELECTRIC CELLS; SEMIMETALS; SILICON COMPOUNDS; 360101* - Metals & Alloys- Preparation & Fabrication; 140501 - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Strongin, M, Ghosh, A K, Wiesmann, H J, Rock, E B, and Lutz, III, H A. Thermal decomposition of silane to form hydrogenated amorphous Si. United States: N. p., Web.
Strongin, M, Ghosh, A K, Wiesmann, H J, Rock, E B, & Lutz, III, H A. Thermal decomposition of silane to form hydrogenated amorphous Si. United States.
Strongin, M, Ghosh, A K, Wiesmann, H J, Rock, E B, and Lutz, III, H A. . "Thermal decomposition of silane to form hydrogenated amorphous Si". United States.
@article{osti_5374683,
title = {Thermal decomposition of silane to form hydrogenated amorphous Si},
author = {Strongin, M and Ghosh, A K and Wiesmann, H J and Rock, E B and Lutz, III, H A},
abstractNote = {Hydrogenated amorphous silicon is produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, at elevated temperatures of about 1700 to 2300/sup 0/C, in a vacuum of about 10/sup -8/ to 10/sup -4/ torr. A gaseous mixture is formed of atomic hydrogen and atomic silicon. The gaseous mixture is deposited onto a substrate to form hydrogenated amorphous silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {},
month = {}
}

Patent:
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