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Title: Electrochemical planarization

Abstract

In a process for fabricating planarized thin film metal interconnects for integrated circuit structures, a planarized metal layer is etched back to the underlying dielectric layer by electropolishing, ion milling or other procedure. Electropolishing reduces processing time from hours to minutes and allows batch processing of multiple wafers. The etched back planarized thin film interconnect is flush with the dielectric layer. 12 figures.

Inventors:
;
Issue Date:
OSTI Identifier:
5354406
Patent Number(s):
5256565
Application Number:
PPN: US 7-348982
Assignee:
Dept. of Energy, Washington, DC (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Patent File Date: 8 May 1989
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; INTEGRATED CIRCUITS; FABRICATION; ELECTROPOLISHING; ETCHING; METALS; THIN FILMS; ELECTROLYSIS; ELECTRONIC CIRCUITS; ELEMENTS; FILMS; LYSIS; MICROELECTRONIC CIRCUITS; POLISHING; SURFACE FINISHING; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Bernhardt, A F, and Contolini, R J. Electrochemical planarization. United States: N. p., 1993. Web.
Bernhardt, A F, & Contolini, R J. Electrochemical planarization. United States.
Bernhardt, A F, and Contolini, R J. Tue . "Electrochemical planarization". United States.
@article{osti_5354406,
title = {Electrochemical planarization},
author = {Bernhardt, A F and Contolini, R J},
abstractNote = {In a process for fabricating planarized thin film metal interconnects for integrated circuit structures, a planarized metal layer is etched back to the underlying dielectric layer by electropolishing, ion milling or other procedure. Electropolishing reduces processing time from hours to minutes and allows batch processing of multiple wafers. The etched back planarized thin film interconnect is flush with the dielectric layer. 12 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {10}
}