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Title: Method for deposition of a conductor in integrated circuits

Abstract

A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten. 2 figs.

Inventors:
; ; ;
Issue Date:
Research Org.:
AT&T Corporation
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
527788
Patent Number(s):
5,663,098
Application Number:
PAN: 8-258,911
Assignee:
Sandia Corp., Albuquerque, NM (United States) SNL; SCA: 426000; PA: EDB-97:126632; SN: 97001846773
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 2 Sep 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; INTEGRATED CIRCUITS; ELECTRIC CONDUCTORS; FABRICATION; CHEMICAL VAPOR DEPOSITION; TUNGSTEN; SUBSTRATES; ETCHING

Citation Formats

Creighton, J.R., Dominguez, F., Johnson, A.W., and Omstead, T.R. Method for deposition of a conductor in integrated circuits. United States: N. p., 1997. Web.
Creighton, J.R., Dominguez, F., Johnson, A.W., & Omstead, T.R. Method for deposition of a conductor in integrated circuits. United States.
Creighton, J.R., Dominguez, F., Johnson, A.W., and Omstead, T.R. Tue . "Method for deposition of a conductor in integrated circuits". United States.
@article{osti_527788,
title = {Method for deposition of a conductor in integrated circuits},
author = {Creighton, J.R. and Dominguez, F. and Johnson, A.W. and Omstead, T.R.},
abstractNote = {A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {9}
}