Method for deposition of a conductor in integrated circuits
Abstract
A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten. 2 figs.
- Inventors:
- Issue Date:
- Research Org.:
- AT&T
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 527788
- Patent Number(s):
- 5663098
- Application Number:
- PAN: 8-258,911
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 2 Sep 1997
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; INTEGRATED CIRCUITS; ELECTRIC CONDUCTORS; FABRICATION; CHEMICAL VAPOR DEPOSITION; TUNGSTEN; SUBSTRATES; ETCHING
Citation Formats
Creighton, J R, Dominguez, F, Johnson, A W, and Omstead, T R. Method for deposition of a conductor in integrated circuits. United States: N. p., 1997.
Web.
Creighton, J R, Dominguez, F, Johnson, A W, & Omstead, T R. Method for deposition of a conductor in integrated circuits. United States.
Creighton, J R, Dominguez, F, Johnson, A W, and Omstead, T R. Tue .
"Method for deposition of a conductor in integrated circuits". United States.
@article{osti_527788,
title = {Method for deposition of a conductor in integrated circuits},
author = {Creighton, J R and Dominguez, F and Johnson, A W and Omstead, T R},
abstractNote = {A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {9}
}
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