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Title: Schottky barrier MOSFET systems and fabrication thereof

Abstract

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

Inventors:
Issue Date:
Research Org.:
James D Welch
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
527786
Patent Number(s):
5,663,584
Application Number:
PAN: 8-368,149
Assignee:
KCSO; SCA: 426000; PA: EDB-97:126627; SN: 97001846770
DOE Contract Number:  
FG47-93R701314
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 2 Sep 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; MOSFET; SCHOTTKY BARRIER DIODES; FABRICATION; DESIGN; USES; DOPED MATERIALS

Citation Formats

Welch, J.D. Schottky barrier MOSFET systems and fabrication thereof. United States: N. p., 1997. Web.
Welch, J.D. Schottky barrier MOSFET systems and fabrication thereof. United States.
Welch, J.D. Tue . "Schottky barrier MOSFET systems and fabrication thereof". United States.
@article{osti_527786,
title = {Schottky barrier MOSFET systems and fabrication thereof},
author = {Welch, J.D.},
abstractNote = {(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {9}
}