Process for preparing silicon carbide foam

Whinnery, L L; Nichols, M C; Wheeler, D R; Loy, D A

Title: Process for preparing silicon carbide foam

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Abstract

A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolyzed in an inert atmosphere to form a SiC foam. 9 figs.

Inventors:: Whinnery, L L; Nichols, M C; Wheeler, D R; Loy, D A

Issue Date:: 1997-09-16

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

Sponsoring Org.:: USDOE, Washington, DC (United States)

OSTI Identifier:: 527777

Patent Number(s):: 5668188

Application Number:: PAN: 8-586,453

Assignee:: Sandia Corp., Albuquerque, NM (United States)

DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Resource Relation:: Other Information: PBD: 16 Sep 1997

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; FOAMS; SILICON CARBIDES; SYNTHESIS; POROUS MATERIALS; PYROLYSIS; PRECURSOR

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                    Whinnery, L L, Nichols, M C, Wheeler, D R, and Loy, D A. Process for preparing silicon carbide foam.  United States: N. p., 1997. 
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                    Whinnery, L L, Nichols, M C, Wheeler, D R, & Loy, D A. Process for preparing silicon carbide foam.  United States.

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                    Whinnery, L L, Nichols, M C, Wheeler, D R, and Loy, D A. Tue .  
        "Process for preparing silicon carbide foam".  United States.

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@article{osti_527777,

  title        = {Process for preparing silicon carbide foam},

  author       = {Whinnery, L L and Nichols, M C and Wheeler, D R and Loy, D A},

  abstractNote = {A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolyzed in an inert atmosphere to form a SiC foam. 9 figs.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1997},

  month        = {9}

}

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Process for preparing silicon carbide foam

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A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolized in an inert atmosphere to form a SiC foam.
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