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Title: P-type gallium nitride

Abstract

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Univ. of California (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
527752
Patent Number(s):
5,657,335
Application Number:
PAN: 8-146,502
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 12 Aug 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; GALLIUM NITRIDES; FABRICATION; P-TYPE CONDUCTORS; ELECTRICAL PROPERTIES; DOPED MATERIALS; ELECTRONIC EQUIPMENT

Citation Formats

Rubin, M, Newman, N, Fu, T, Ross, J, and Chan, J. P-type gallium nitride. United States: N. p., 1997. Web.
Rubin, M, Newman, N, Fu, T, Ross, J, & Chan, J. P-type gallium nitride. United States.
Rubin, M, Newman, N, Fu, T, Ross, J, and Chan, J. Tue . "P-type gallium nitride". United States.
@article{osti_527752,
title = {P-type gallium nitride},
author = {Rubin, M and Newman, N and Fu, T and Ross, J and Chan, J},
abstractNote = {Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {8}
}