P-type gallium nitride
Abstract
Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 527752
- Patent Number(s):
- 5657335
- Application Number:
- PAN: 8-146,502
- Assignee:
- Univ. of California, Oakland, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 12 Aug 1997
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; GALLIUM NITRIDES; FABRICATION; P-TYPE CONDUCTORS; ELECTRICAL PROPERTIES; DOPED MATERIALS; ELECTRONIC EQUIPMENT
Citation Formats
Rubin, M, Newman, N, Fu, T, Ross, J, and Chan, J. P-type gallium nitride. United States: N. p., 1997.
Web.
Rubin, M, Newman, N, Fu, T, Ross, J, & Chan, J. P-type gallium nitride. United States.
Rubin, M, Newman, N, Fu, T, Ross, J, and Chan, J. Tue .
"P-type gallium nitride". United States.
@article{osti_527752,
title = {P-type gallium nitride},
author = {Rubin, M and Newman, N and Fu, T and Ross, J and Chan, J},
abstractNote = {Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {8}
}