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Title: Method of making an InAsSb/InAsSbP diode lasers

Abstract

InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 {micro}m to 5 {micro}m is possible by varying the ratio of As:Sb in the active layer. 9 figs.

Inventors:
Issue Date:
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
527748
Patent Number(s):
5,658,825
Application Number:
PAN: 8-717,125; CNN: Grant DAAH04-95-1-0343
Assignee:
Northwestern Univ., Evanston, IL (United States) PTO; SCA: 426002; PA: EDB-97:126646; SN: 97001843789
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 19 Aug 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR LASERS; LASER MATERIALS; FABRICATION; HETEROJUNCTIONS; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; INDIUM COMPOUNDS; PHOSPHORUS COMPOUNDS

Citation Formats

Razeghi, M. Method of making an InAsSb/InAsSbP diode lasers. United States: N. p., 1997. Web.
Razeghi, M. Method of making an InAsSb/InAsSbP diode lasers. United States.
Razeghi, M. Tue . "Method of making an InAsSb/InAsSbP diode lasers". United States.
@article{osti_527748,
title = {Method of making an InAsSb/InAsSbP diode lasers},
author = {Razeghi, M.},
abstractNote = {InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 {micro}m to 5 {micro}m is possible by varying the ratio of As:Sb in the active layer. 9 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {8}
}