Method of making an InAsSb/InAsSbP diode lasers
Abstract
InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 {micro}m to 5 {micro}m is possible by varying the ratio of As:Sb in the active layer. 9 figs.
- Inventors:
- Issue Date:
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 527748
- Patent Number(s):
- 5658825
- Application Number:
- PAN: 8-717,125; CNN: Grant DAAH04-95-1-0343
- Assignee:
- Northwestern Univ., Evanston, IL (United States)
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 19 Aug 1997
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR LASERS; LASER MATERIALS; FABRICATION; HETEROJUNCTIONS; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; INDIUM COMPOUNDS; PHOSPHORUS COMPOUNDS
Citation Formats
Razeghi, M. Method of making an InAsSb/InAsSbP diode lasers. United States: N. p., 1997.
Web.
Razeghi, M. Method of making an InAsSb/InAsSbP diode lasers. United States.
Razeghi, M. Tue .
"Method of making an InAsSb/InAsSbP diode lasers". United States.
@article{osti_527748,
title = {Method of making an InAsSb/InAsSbP diode lasers},
author = {Razeghi, M},
abstractNote = {InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 {micro}m to 5 {micro}m is possible by varying the ratio of As:Sb in the active layer. 9 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {8}
}
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