Reactor design for uniform chemical vapor deposition-grown films without substrate rotation

Wanlass, M

Title: Reactor design for uniform chemical vapor deposition-grown films without substrate rotation

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Abstract

A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

Inventors:: Wanlass, M

Issue Date:: 1985-02-19

Research Org.:: Solar Energy Research Inst. (SERI), Golden, CO (United States)

OSTI Identifier:: 5273619

Application Number:: ON: DE85017804

Assignee:: Dept. of Energy

DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; CRYSTAL GROWTH; DESIGN; FILMS; HELICAL CONFIGURATION; QUARTZ; CHALCOGENIDES; CHEMICAL COATING; CONFIGURATION; DEPOSITION; MATERIALS; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SILICON OXIDES; SURFACE COATING; 360601* - Other Materials- Preparation & Manufacture

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                    Wanlass, M. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation.  United States: N. p., 1985. 
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                    Wanlass, M. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation.  United States.

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                    Wanlass, M. Tue .  
        "Reactor design for uniform chemical vapor deposition-grown films without substrate rotation".  United States.

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@article{osti_5273619,

  title        = {Reactor design for uniform chemical vapor deposition-grown films without substrate rotation},

  author       = {Wanlass, M},

  abstractNote = {A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1985},

  month        = {2}

}

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