Reactor design for uniform chemical vapor deposition-grown films without substrate rotation
Abstract
A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.
- Inventors:
- Issue Date:
- Research Org.:
- Solar Energy Research Inst. (SERI), Golden, CO (United States)
- OSTI Identifier:
- 5273619
- Application Number:
- ON: DE85017804
- Assignee:
- Dept. of Energy
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; CRYSTAL GROWTH; DESIGN; FILMS; HELICAL CONFIGURATION; QUARTZ; CHALCOGENIDES; CHEMICAL COATING; CONFIGURATION; DEPOSITION; MATERIALS; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SILICON OXIDES; SURFACE COATING; 360601* - Other Materials- Preparation & Manufacture
Citation Formats
Wanlass, M. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation. United States: N. p., 1985.
Web.
Wanlass, M. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation. United States.
Wanlass, M. Tue .
"Reactor design for uniform chemical vapor deposition-grown films without substrate rotation". United States.
@article{osti_5273619,
title = {Reactor design for uniform chemical vapor deposition-grown films without substrate rotation},
author = {Wanlass, M},
abstractNote = {A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {2}
}