Reactor design for uniform chemical vapor deposition-grown films without substrate rotation

Title: Reactor design for uniform chemical vapor deposition-grown films without substrate rotation

Full Record
Other Related Research

Abstract

A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

Inventors:: Wanlass, M.

Issue Date:: 1985-02-19

Research Org.:: Solar Energy Research Inst., Golden, CO (USA)

OSTI Identifier:: 5273619

Application Number:: ON: DE85017804

Assignee:: Dept. of Energy ERA-10-049114; EDB-85-156760

DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; CRYSTAL GROWTH; DESIGN; FILMS; HELICAL CONFIGURATION; QUARTZ; CHALCOGENIDES; CHEMICAL COATING; CONFIGURATION; DEPOSITION; MATERIALS; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SILICON OXIDES; SURFACE COATING; 360601* - Other Materials- Preparation & Manufacture

Citation Formats


                    Wanlass, M. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation.  United States: N. p., 1985. 
        Web.

Copy to clipboard


                    Wanlass, M. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation.  United States.

Copy to clipboard


                    Wanlass, M. Tue .  
        "Reactor design for uniform chemical vapor deposition-grown films without substrate rotation".  United States.

Copy to clipboard


                    
@article{osti_5273619,

  title        = {Reactor design for uniform chemical vapor deposition-grown films without substrate rotation},

  author       = {Wanlass, M.},

  abstractNote = {A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1985},

  month        = {2}

}

Copy to clipboard

Patent:

Search for the full text at the U.S. Patent and Trademark Office

Save / Share:

Export Metadata

Save to My Library

Similar records in DOE Patents and OSTI.GOV collections:

Reactor design for uniform chemical vapor deposition-grown films without substrate rotation

Patent Wanlass, M.

A reactor vessel is described for chemical vapor deposition of a uniform semiconductor film on a substrate, comprising: a generally cylindrical reaction chamber for receiving a substrate and a flow of reaction gas capable of depositing a film on the substrate under the conditions of the chamber, the chamber having upper and lower portion and being oriented about a vertical axis; a supporting means having a substrate support surface generally perpendicular to the vertical axis for carrying the substrate within the lower portion of the reaction chamber in a predetermined relative position with respect to the upper portion of themore »« less
Reactor design for uniform chemical vapor deposition-grown films without substrate rotation

Patent Wanlass, Mark (Golden, CO)

A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface ofmore »« less
Full Text Available
Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition: Preprint

Conference Moutinho, H. R.; Jiang, C.-S.; Nelson, B.; ...

We have studied the influence of substrate temperature and hydrogen dilution ratio on the properties of silicon thin films deposited on single-crystal silicon and glass substrates. We varied the initial substrate temperature from 200 to 400C and the dilution ratio from 10 to 100. We also studied the effectiveness of the use of a seed layer to increase the crystallinity of the films. The films were analyzed by atomic force microscopy, X-ray diffraction, Raman spectroscopy, and transmission and scanning electron microscopy. We found that as the dilution ratio is increased, the films go from amorphous, to a mixture of amorphousmore »« less
Full Text Available
Microstructure of ultrananocrystalline diamond films grown by microwave Ar{endash}CH{sub 4} plasma chemical vapor deposition with or without added H{sub 2}

Journal Article Jiao, S.; Sumant, A.; Kirk, M. A.; ... - Journal of Applied Physics

Ultrananocrystalline diamond (UNCD) films, grown using microwave plasma-enhanced chemical vapor deposition with gas mixtures of Ar{endash}1%CH{sub 4} or Ar{endash}1%CH{sub 4}{endash}5%H{sub 2}, have been examined with transmission electron microscopy (TEM). The films consist of equiaxed nanograins (2{endash}10 nm in diameter) and elongated twinned dendritic grains. The area occupied by dendritic grains increases with the addition of H{sub 2}. High resolution electron microscopy shows no evidence of an amorphous phase at grain boundaries, which are typically one or two atomic layer thick (0.2{endash}0.4 nm). Cross-section TEM reveals a noncolumnar structure of the films. The initial nucleation of diamond occurs directly on themore »« less
DOI: 10.1063/1.1377301
Microstructure of ultrananocrystalline diamond films grown by microwave Ar--CH{sub 4} plasma chemical vapor deposition with or without added H{sub 2}

Journal Article Jiao, S.; Sumant, A.; Kirk, M. A.; ... - Journal of Applied Physics

Ultrananocrystalline diamond (UNCD) films, grown using microwave plasma-enhanced chemical vapor deposition with gas mixtures of Ar--1%CH{sub 4} or Ar--1%CH{sub 4}--5%H{sub 2}, have been examined with transmission electron microscopy (TEM). The films consist of equiaxed nanograins (2--10 nm in diameter) and elongated twinned dendritic grains. The area occupied by dendritic grains increases with the addition of H{sub 2}. High resolution electron microscopy shows no evidence of an amorphous phase at grain boundaries, which are typically one or two atomic layer thick (0.2--0.4 nm). Cross-section TEM reveals a noncolumnar structure of the films. The initial nucleation of diamond occurs directly on themore »« less
DOI: 10.1063/1.1377301

Similar Records