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Title: Reactor design for uniform chemical vapor deposition-grown films without substrate rotation

Abstract

A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

Inventors:
Issue Date:
Research Org.:
Solar Energy Research Inst., Golden, CO (USA)
OSTI Identifier:
5273619
Application Number:
ON: DE85017804
Assignee:
Dept. of Energy ERA-10-049114; EDB-85-156760
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; CRYSTAL GROWTH; DESIGN; FILMS; HELICAL CONFIGURATION; QUARTZ; CHALCOGENIDES; CHEMICAL COATING; CONFIGURATION; DEPOSITION; MATERIALS; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SILICON OXIDES; SURFACE COATING; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Wanlass, M. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation. United States: N. p., 1985. Web.
Wanlass, M. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation. United States.
Wanlass, M. Tue . "Reactor design for uniform chemical vapor deposition-grown films without substrate rotation". United States.
@article{osti_5273619,
title = {Reactor design for uniform chemical vapor deposition-grown films without substrate rotation},
author = {Wanlass, M.},
abstractNote = {A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {2}
}