Global to push GA events into
skip to main content

Title: Low temperature thin films formed from nanocrystal precursors

Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000 K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure. 9 figures.
Inventors:
;
Issue Date:
OSTI Identifier:
5253435
Assignee:
Univ. of California, Oakland, CA (United States) PTO; EDB-94-053651
Patent Number(s):
US 5262357; A
Application Number:
PPN: US 7-796242
Contract Number:
AC03-76SF00098
Resource Relation:
Patent File Date: 22 Nov 1991
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; FABRICATION; CRYSTAL STRUCTURE; HEAT TREATMENTS; THICKNESS; DIMENSIONS; MATERIALS; 360601* - Other Materials- Preparation & Manufacture