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Title: Low temperature thin films formed from nanocrystal precursors

Abstract

Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000 K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure. 9 figures.

Inventors:
;
Issue Date:
OSTI Identifier:
5253435
Patent Number(s):
5262357
Application Number:
PPN: US 7-796242
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Resource Relation:
Patent File Date: 22 Nov 1991
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; FABRICATION; CRYSTAL STRUCTURE; HEAT TREATMENTS; THICKNESS; DIMENSIONS; MATERIALS; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Alivisatos, A P, and Goldstein, A N. Low temperature thin films formed from nanocrystal precursors. United States: N. p., 1993. Web.
Alivisatos, A P, & Goldstein, A N. Low temperature thin films formed from nanocrystal precursors. United States.
Alivisatos, A P, and Goldstein, A N. Tue . "Low temperature thin films formed from nanocrystal precursors". United States.
@article{osti_5253435,
title = {Low temperature thin films formed from nanocrystal precursors},
author = {Alivisatos, A P and Goldstein, A N},
abstractNote = {Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000 K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure. 9 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {11}
}