Electrochemical thinning of silicon
Abstract
Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 5226408
- Patent Number(s):
- 5277769
- Application Number:
- PPN: US 7-798781
- Assignee:
- Dept. of Energy, Washington, DC ()
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 27 Nov 1991
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SILICON; ELECTROCHEMICAL MACHINING; ETCHING; MASKING; MATERIALS TESTING; OXIDATION; SAMPLE PREPARATION; CHEMICAL MACHINING; CHEMICAL REACTIONS; ELEMENTS; MACHINING; SEMIMETALS; SURFACE FINISHING; TESTING; 360601* - Other Materials- Preparation & Manufacture
Citation Formats
Medernach, J W. Electrochemical thinning of silicon. United States: N. p., 1994.
Web.
Medernach, J W. Electrochemical thinning of silicon. United States.
Medernach, J W. Tue .
"Electrochemical thinning of silicon". United States.
@article{osti_5226408,
title = {Electrochemical thinning of silicon},
author = {Medernach, J W},
abstractNote = {Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 11 00:00:00 EST 1994},
month = {Tue Jan 11 00:00:00 EST 1994}
}
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