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Title: Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same

An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises ytterbium doped apatite (Yb:Ca[sub 5](PO[sub 4])[sub 3]F) or Yb:FAP, or ytterbium doped crystals that are structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode. 9 figures.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
5221265
Assignee:
Dept. of Energy, Washington, DC () PTO; EDB-94-065029
Patent Number(s):
US 5280492; A
Application Number:
PPN: US 7-792792
Contract Number:
W-7405-ENG-48
Resource Relation:
Patent File Date: 15 Nov 1991
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SOLID STATE LASERS; DESIGN; LASER MATERIALS; DOPED MATERIALS; OPERATION; OPTICAL PUMPING; LASERS; MATERIALS; PUMPING; 426002* - Engineering- Lasers & Masers- (1990-)