Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same
Abstract
An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises ytterbium doped apatite (Yb:Ca[sub 5](PO[sub 4])[sub 3]F) or Yb:FAP, or ytterbium doped crystals that are structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode. 9 figures.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 5221265
- Patent Number(s):
- 5280492
- Application Number:
- PPN: US 7-792792
- Assignee:
- Dept. of Energy, Washington, DC ()
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 15 Nov 1991
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; SOLID STATE LASERS; DESIGN; LASER MATERIALS; DOPED MATERIALS; OPERATION; OPTICAL PUMPING; LASERS; MATERIALS; PUMPING; 426002* - Engineering- Lasers & Masers- (1990-)
Citation Formats
Krupke, W F, Payne, S A, Chase, L L, and Smith, L K. Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same. United States: N. p., 1994.
Web.
Krupke, W F, Payne, S A, Chase, L L, & Smith, L K. Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same. United States.
Krupke, W F, Payne, S A, Chase, L L, and Smith, L K. Tue .
"Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same". United States.
@article{osti_5221265,
title = {Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same},
author = {Krupke, W F and Payne, S A and Chase, L L and Smith, L K},
abstractNote = {An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises ytterbium doped apatite (Yb:Ca[sub 5](PO[sub 4])[sub 3]F) or Yb:FAP, or ytterbium doped crystals that are structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode. 9 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}
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